Temperature Dependent Mobility Model for Predictive TCAD Simulations of 4H-SiC

Autor: Hemant Dixit, Daniel J. Lichtenwalner, Andreas Scholtze, Jae Hyung Park, Steven Rogers, Simon Bubel, Sei Hyung Ryu

Publikováno v: Materials Science Forum. 1090:153-157

We present a calibrated bulk mobility model for 4H-SiC. Hall measurements are performed on 4H-SiC samples to determine the bulk mobility/resistivity in the temperature range of 200-500K. We observe that temperature dependence of bulk resistivity cann

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4e0e69b344ff675bbaeb7abac926b93e
https://doi.org/10.4028/p-1my2o8

Exploration of Bulk and Epitaxy Defects in 4H-SiC Using Large Scale Optical Characterization

Autor: Adrian Powell, Jyothirmai Ambati, Albert A. Burk, Joseph John Sumakeris, Jeff Seaman, M. O’Loughlin, Michael James Paisley, Simon Bubel, Robert Tyler Leonard, Elif Balkas, Yuri I. Khlebnikov

Publikováno v: Materials Science Forum. 897:226-229

In this work, aggregate epitaxial carrot distributions are observed at the crystal, wafer and dislocation defect levels, instead of individual extended carrot defect level. From combining large volumes of data, carrots are observed when both threadin

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::586ee7fa33684576303fa24652d16532
https://doi.org/10.4028/www.scientific.net/msf.897.226

Mechanical layer compaction for dispersion processed nanoparticulate zinc oxide thin film transistors

Autor: Roland Schmechel, Simon Bubel

Publikováno v: Microelectronic Engineering. 96:36-39

Using rolling as a roll-to-roll compatible compaction process for solution processable electronics, we demonstrate improved layer morphology and field effect transistor performance of nanoparticulate zinc oxide (ZnO) thin films. Semiconducting ZnO la

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b608250414c0acfc55fb83340b8cbe5d
https://doi.org/10.1016/j.mee.2012.02.044

High performance low temperature solution-processed zinc oxide thin film transistor

Autor: Mehmet Sanlialp, C. Busch, Gabi Schierning, Roland Schmechel, Simon Bubel, Ralf Theissmann

Publikováno v: Thin Solid Films. 519:5623-5628

Amorphous zinc oxide thin films have been processed out of an aqueous solution applying a one step synthesis procedure. For this, zinc oxide containing crystalline water (ZnO⋅ × H2O) is dissolved in aqueous ammonia (NH3), making use of the higher

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f504b55428e32fb90917ea3170bcd269
https://doi.org/10.1016/j.tsf.2011.02.073

Schmitt trigger using a self-healing ionic liquid gated transistor

Autor: Simon Bubel, J. Herbert Waite, Matthew S. Menyo, Michael L. Chabinyc, Thomas E. Mates

Publikováno v: Bubel, S; Menyo, MS; Mates, TE; Waite, JH; & Chabinyc, ML. (2015). Schmitt trigger using a self-healing ionic liquid gated transistor. Advanced Materials, 27(21), 3331-3335. doi: 10.1002/adma.201500556. UC Santa Barbara: Retrieved from: http://www.escholarship.org/uc/item/3ms32281
Bubel, S; Menyo, MS; Mates, TE; Waite, JH; & Chabinyc, ML. (2015). Schmitt trigger using a self-healing ionic liquid gated transistor. Advanced Materials, 27(21), 3331-3335. doi: 10.1002/adma.201500556. UC Santa Barbara: Retrieved from: http://www.escholarship.org/uc/item/7n65n121
Advanced Materials, vol 27, iss 21
Advanced materials (Deerfield Beach, Fla.), vol 27, iss 21

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Electrical double layer transistors using ionic liquids as the gate and ZnO as the semiconductor exhibit stable operation in the presence of redox active additives. The characteristics of the device

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4021e49f4be62c1c583e0e5b086b13d5
http://www.escholarship.org/uc/item/3ms32281