Zobrazeno 1 - 10 of 16 pro vyhledávání: '"Simon, William Andrew"'
1
Report
HDTorch: Accelerating Hyperdimensional Computing with GP-GPUs for Design Space Exploration
Autor: Simon, William Andrew, Pale, Una, Teijeiro, Tomas, Atienza, David
HyperDimensional Computing (HDC) as a machine learning paradigm is highly interesting for applications involving continuous, semi-supervised learning for long-term monitoring. However, its accuracy is not yet on par with other Machine Learning (ML) a
Externí odkaz: http://arxiv.org/abs/2206.04746
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2
Akademický článek
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3
Akademický článek
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5
A Fast, Reliable and Wide-voltage-range In-memory Computing Architecture
Autor: Simon, William Andrew, Galicia, Juan-Martin, Levisse, Alexandre Sébastien Julien, Zapater Sancho, Marina, Atienza Alonso, David
In-Memory Computing (IMC) solutions, and particularly bitline computing in SRAM, appear promising as they mitigate one of the most energy consuming aspects in computation: data movement. In this work we propose a fast (2.4Ghz for bitwise operations a
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______185::f9b91e8f6fbb009ba31b13f219deff18
https://infoscience.epfl.ch/record/265152
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6
BLADE: A BitLine Accelerator for Devices on the Edge
Autor: Simon, William Andrew, Qureshi, Yasir Mahmood, Levisse, Alexandre Sébastien Julien, Zapater Sancho, Marina, Atienza Alonso, David
The increasing ubiquity of edge devices in the consumer market, along with their ever more computationally expensive workloads, necessitate corresponding increases in computing power to support such workloads. In-memory computing is attractive in edg
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______185::90d007e95937033d7987d3e3232c742e
https://infoscience.epfl.ch/record/264782
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7
Memory chip or memory array for wide-voltage range in-memory computing using bitline technology
Autor: Simon, William Andrew, Rios, Marco Antonio, Levisse, Alexandre Sébastien, Zapater, Marina, Atienza Alonso, David
A random access memory having a memory array having a plurality of local memory groups, each local memory group including a plurality of bitcells arranged in a bitcell column, a pair of local bitlines operatively connected to the plurality of bitcell
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______185::363d8d1be51b0e194fbe40c3a3175158
https://infoscience.epfl.ch/record/288196
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8
Functionality Enhanced Memories for Edge-AI Embedded Systems
Autor: Levisse, Alexandre Sébastien Julien, Rios, Marco Antonio, Simon, William Andrew, Gaillardon, Pierre-Emmanuel Julien Marc, Atienza Alonso, David
With the surge in complexity of edge workloads, it appeared in the scientific community that such workloads cannot be anymore overflown to the cloud due to the huge edge device to server communication energy cost and the high energy consumption induc
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______185::4ec2f226b23528389930ffffc42fd65c
https://infoscience.epfl.ch/record/272717
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9
In-Memory Hardware and Architectural Extensions for Workloads Acceleration
Autor: Simon, William Andrew
Utilization of edge devices has exploded in the last decade, with such use cases as wearable devices, autonomous driving, and smart homes. As their ubiquity grows, so do expectations of their capabilities. Simultaneously, their formfactor and use cas
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d1368129006ff76be44aa6846861da19
https://infoscience.epfl.ch/record/296065
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