Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Simo Eränen"'
Autor:
Timo Aalto, Veli-Matti Airaksinen, Stephan Gerhard Albert, Giorgio Allegato, Marco Amiotti, Olli Anttila, Juergen Auersperg, Antonio Bonucci, Indranil Ronnie Bose, Tanja Braun, Mikael Broas, J. Burggraf, Christopher Cameron, Rob N. Candler, Zhen Cao, André Cardoso, Kuo-Shen Chen, Andrea Conte, Adriana Cozma, Cristina E. Davis, Sophia Dempwolf, Pradeep Dixit, Michael Dost, Viorel Dragoi, Simo Eränen, Bruno Fain, B. Figeys, Andreas C. Fischer, Christoph Flötgen, Sami Franssila, Alois Friedberger, Marc Fueldner, Maria Ganchenkova, Pilar Gonzalez, Miguel A. Gosálvez, Michael Grimes, Atte Haapalinna, Paul Hagelin, Paul Hammond, Kimmo Henttinen, Vesa Henttonen, David Horsley, Takeo Hoshi, Satoshi Itoh, Henrik Jakobsen, R. Jansen, Kerstin Jonsson, Dirk Kähler, Harindra Kumar Kannojia, Hannu Kattelus, Gudrun Kissinger, Roy Knechtel, Kathrin Knese, Kai Kolari, Mika Koskenvuori, Heikki Kuisma, Amit Kulkarni, Franz Laermer, Christof Landesberger, Christina Leinenbach, Michael K. LeVasseur, Jue Li, Yuyuan Lin, Paul F. Lindner, K. Lodewijks, Fabian Lofink, Giorgio Longoni, Sebastian Markus Luber, M. Mahmud-ul-hasan, Jari Mäkinen, Matti Mäntysalo, Devin Martin, Federico Maspero, Toni T. Mattila, Luca Mauri, Peter Merz, Doug Meyer, Marco Moraja, Teruaki Motooka, Gerhard Müller, Paul Muralt, Risto M. Nieminen, Frank Niklaus, Laura Oggioni, Juuso Olkkonen, Elmeri Österlund, Kuang-Shun Ou, Jari Paloheimo, Toni P. Pasanen, Mervi Paulasto-Kröckel, Thomas Plach, Jean-Philippe Polizzi, Klaus Pressel, Matti Putkonen, Riikka L. Puurunen, Wolfgang Reinert, Enea Rizzi, V. Rochus, Glenn Ross, X. Rottenberg, Lauri Sainiemi, Hele Savin, Harald Schenk, Marc Schikowski, Matthias Schulze, S. Seema, S. Severi, Lasse Skogström, Tadatomo Suga, Scott Sullivan, Tommi Suni, Horst Theuss, Markku Tilli, H.A.C. Tilmans, Ilkka Tittonen, Hannah Tofteberg, Pekka Törmä, Santeri Tuomikoski, Frode Tyholdt, Tsuyoshi Uda, Örjan Vallin, Carlo Valzasina, Timo Veijola, Eeva Viinikka, Dietmar Vogel, Andreas Vogl, Vesa Vuorinen, W.J. Westervelde, Sebastian Wicht, Robert Wieland, Bernhard Winkler, Levent Yobas, Luca Zanotti, I. Zubel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16f0bddf47c3d8c3eaa0f0359a359b22
https://doi.org/10.1016/b978-0-12-817786-0.00065-7
https://doi.org/10.1016/b978-0-12-817786-0.00065-7
Autor:
T. Eronen, Hannu Husu, K. Miikkulainen, Eino Valtonen, M. Hirvonen, Hans Andersson, J. Mäkinen, S. Nenonen, Hannu Ronkainen, Simo Eränen, Risto Punkkinen, Antti Lassila
Publikováno v:
Valtonen, E, Eronen, T, Nenonen, S, Andersson, H, Miikkulainen, K, Eränen, S, Ronkainen, H, Mäkinen, J, Husu, H, Lassila, A, Punkkinen, R & Hirvonen, M 2016, ' Fabrication of a thin silicon detector with excellent thickness uniformity ', Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 810, pp. 27-31 . https://doi.org/10.1016/j.nima.2015.11.124
We have fabricated and tested a thin silicon detector with the specific goal of having a very good thickness uniformity. SOI technology was used in the detector fabrication. The detector was designed to be used as a ΔE detector in a silicon telescop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dbbde6ee630030730ccaf01067e62fcb
https://doi.org/10.1016/j.nima.2015.11.124
https://doi.org/10.1016/j.nima.2015.11.124
Publikováno v:
Kalliopuska, J, Wu, X, Jakubek, J, Eränen, S & Virolainen, T 2013, ' Processing and characterization of edgeless radiation detectors for large area detection ', Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 731, pp. 205-209 . https://doi.org/10.1016/j.nima.2013.06.097
The edgeless or active edge silicon pixel detectors have been gaining a lot of interest due to improved silicon processing capabilities. At VTT, we have recently triggered a multi-project wafer process of edgeless silicon detectors. Totally 80 pieces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b856868e2ad89d8e4de0a4a2cd02d832
https://doi.org/10.1016/j.nima.2013.06.097
https://doi.org/10.1016/j.nima.2013.06.097
Publikováno v:
Rissanen, A, Kantojärvi, U, Blomberg, M, Antila, J & Eränen, S 2012, ' Monolithically integrated microspectrometer-on-chip based on tunable visible light MEMS FPI ', Sensors and Actuators A: Physical, vol. 182, pp. 130-135 . https://doi.org/10.1016/j.sna.2012.05.023
We present a novel microspectrometer-on-chip for the visible spectral region, consisting of a tunable MEMS Fabry-Perot interferometer (FPI) monolithically integrated on a PIN photodiode using IC compatible microfabrication techniques. MEMS FPI is an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::16270c93d7117b3c516433b2bdd752dd
https://doi.org/10.1016/j.sna.2012.05.023
https://doi.org/10.1016/j.sna.2012.05.023
Publikováno v:
Kalliopuska, J, Tlustos, L, Eränen, S & Virolainen, T 2011, ' Characterization of edgeless pixel detectors coupled to Medipix2 readout chip ', Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 648, no. Suppl. 1, pp. S32-S36 . https://doi.org/10.1016/j.nima.2011.01.006
VTT has developed a straightforward and fast process to fabricate four-side buttable (edgeless) microstrip and pixel detectors on 6 in. (150 mm) wafers. The process relies on advanced ion implantation to activate the edges of the detector instead of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1f89c57c9ea0c43b410668eddb6b082a
https://doi.org/10.1016/j.nima.2011.01.006
https://doi.org/10.1016/j.nima.2011.01.006
Publikováno v:
Kalliopuska, J, Eränen, S & Virolainen, T 2011, ' Alternative fabrication process for edgeless detectors on 6 in. wafers ', Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 633, no. Suppl. 1, pp. S50-S54 . https://doi.org/10.1016/j.nima.2010.06.119
VTT has developed a straightforward and fast process to fabricate edgeless (active edge) microstrip and pixel detectors on 6 in. (150 mm) wafers. The process avoids all slow process steps, such as polysilicon growth, planarization and additional ICP-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::72874fd4096b183e2951284d267f467b
https://doi.org/10.1016/j.nima.2010.06.119
https://doi.org/10.1016/j.nima.2010.06.119
Autor:
Hans Andersson, Juha Kalliopuska, Simo Eränen, Sami Vähänen, Heikki Sipila, Lukas Tlustos, S. Nenonen
Publikováno v:
Kalliopuska, J, Nenonen, S, Sipilä, H, Andersson, H, Vähänen, S, Eränen, S & Tlustos, L 2009, ' Patterning thick diffused junctions on CdTe ', Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 607, no. 1, pp. 98-102 . https://doi.org/10.1016/j.nima.2009.03.132
Dividing the detector crystal into discrete pixels enables making an imaging detector, in which the charge collected by each pixel can be read separately. Even if the detector is not meant for imaging, patterns on the crystal surface may be used as g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::39f58cd0d952e511fc4ed8c50681139f
https://doi.org/10.1016/j.nima.2009.03.132
https://doi.org/10.1016/j.nima.2009.03.132
Autor:
Simo Eränen, Ismo Luusua, Iiro Hietanen, Mikko Juntunen, Seppo Leppävuori, Kimmo Henttinen, Fan Ji
Publikováno v:
Ji, F, Leppävuori, S, Luusua, I, Henttinen, K, Eränen, S, Hietanen, I & Juntunen, M 2008, ' Fabrication of silicon based through-wafer interconnects for advanced chip scale packaging ', Sensors and Actuators A: Physical, vol. 142, no. 1, pp. 405-412 . https://doi.org/10.1016/j.sna.2007.02.030
This paper presents a fabrication method to achieve through-wafer interconnects (TWIs) by etching, filling and grinding in sequence. Based on this method, advanced chip scale packaging (CSP) is performed. Compared to flip-chip technology, silicon bas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fa9c4e2124379636b54dc057998b1069
https://doi.org/10.1016/j.sna.2007.02.030
https://doi.org/10.1016/j.sna.2007.02.030
Publikováno v:
Juntunen, M, Ji, F, Henttinen, K, Luusua, I, Hietanen, I & Eränen, S 2007, ' Fully tileable photodiode matrix for medical imaging by using through-wafer interconnects ', Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 580, no. 2, pp. 1000-1003 . https://doi.org/10.1016/j.nima.2007.06.055
This paper presents a technology for a fully tileable two-dimensional (2D) photodiode matrix for medical imaging, specifically X-ray computed tomography (CT). A key trend in the CT industry is to build machines with larger area detector to speed up t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a20901b8c814a937d40b4e9df80bc92c
https://doi.org/10.1016/j.nima.2007.06.055
https://doi.org/10.1016/j.nima.2007.06.055
Publikováno v:
Kalliopuska, J, Eränen, S & Orava, R 2007, ' Charge collection characterization of a 3D silicon radiation detector by using 3D simulations ', Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 572, no. 1, pp. 292-296 . https://doi.org/10.1016/j.nima.2006.10.370
In 3D detectors, the electrodes are processed within the bulk of the sensor material. Therefore, the signal charge is collected independently of the wafer thickness and the collection process is faster due to shorter distances between the charge coll
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a68653047ec5f26e18a8b303ea69fdd3
https://cris.vtt.fi/en/publications/e9c20b71-36c9-4dcc-a107-a29d73528b13
https://cris.vtt.fi/en/publications/e9c20b71-36c9-4dcc-a107-a29d73528b13