Zobrazeno 1 - 10
of 499
pro vyhledávání: '"Simmons, C P"'
Autor:
Abadillo-Uriel, J. C., Thorgrimsson, Brandur, Kim, Dohun, Smith, L. W., Simmons, C. B., Ward, Daniel R., Foote, Ryan H., Corrigan, J., Savage, D. E., Lagally, M. G., Calderón, M. J., Coppersmith, S. N., Eriksson, M. A., Friesen, Mark
Publikováno v:
Phys. Rev. B 98, 165438 (2018)
We report anomalous behavior in the energy dispersion of a three-electron double-quantum-dot hybrid qubit and argue that it is caused by atomic-scale disorder at the quantum-well interface. By employing tight-binding simulations, we identify potentia
Externí odkaz:
http://arxiv.org/abs/1805.10398
Autor:
Thorgrimsson, Brandur, Kim, Dohun, Yang, Yuan-Chi, Smith, L. W., Simmons, C. B., Ward, Daniel R., Foote, Ryan H., Corrigan, J., Savage, D. E., Lagally, M. G., Friesen, Mark, Coppersmith, S. N., Eriksson, M. A.
Publikováno v:
npj Quantum Information 3, Article number: 32 (2017)
Identifying and ameliorating dominant sources of decoherence are important steps in understanding and improving quantum systems. Here we show that the free induction decay time ($T_{2}^{*}$) and the Rabi decay rate ($\Gamma_{\mathrm{Rabi}}$) of the q
Externí odkaz:
http://arxiv.org/abs/1611.04945
Autor:
Prance, J. R., Van Bael, B. J., Simmons, C. B., Savage, D. E., Lagally, M. G., Friesen, Mark, Coppersmith, S. N., Eriksson, M. A.
Publikováno v:
Nanotechnology 26, 215201 (2015)
The operation of solid-state qubits often relies on single-shot readout using a nanoelectronic charge sensor, and the detection of events in a noisy sensor signal is crucial for high fidelity readout of such qubits. The most common detection scheme,
Externí odkaz:
http://arxiv.org/abs/1506.02279
Autor:
Kim, Dohun, Ward, D. R., Simmons, C. B., Savage, D. E., Lagally, M. G., Friesen, Mark, Coppersmith, S. N., Eriksson, Mark A.
Publikováno v:
npj Quantum Information 1 15004 (2015)
Isolated spins in semiconductors provide a promising platform to explore quantum mechanical coherence and develop engineered quantum systems. Silicon has attracted great interest as a host material for developing spin qubits because of its weak spin-
Externí odkaz:
http://arxiv.org/abs/1502.03156
Autor:
Kim, Dohun, Ward, D. R., Simmons, C. B., Gamble, John King, Blume-Kohout, Robin, Nielsen, Erik, Savage, D. E., Lagally, M. G., Friesen, Mark, Coppersmith, S. N., Eriksson, M. A.
Publikováno v:
Nature Nanotechnology 10 243 to 247 (2015)
A most intuitive realization of a qubit is a single electron charge sitting at two well-defined positions, such as the left and right sides of a double quantum dot. This qubit is not just simple but also has the potential for high-speed operation, be
Externí odkaz:
http://arxiv.org/abs/1407.7607
Autor:
Kim, Dohun, Shi, Zhan, Simmons, C. B., Ward, D. R., Prance, J. R., Koh, Teck Seng, Gamble, John King, Savage, D. E., Lagally, M. G., Friesen, Mark, Coppersmith, S. N., Eriksson, M. A.
Publikováno v:
Nature 511, 70 (2014)
The similarities between gated quantum dots and the transistors in modern microelectronics - in fabrication methods, physical structure, and voltage scales for manipulation - have led to great interest in the development of quantum bits (qubits) in s
Externí odkaz:
http://arxiv.org/abs/1401.4416
Autor:
Shi, Zhan, Simmons, C. B., Ward, Daniel R., Prance, J. R., Wu, Xian, Koh, Teck Seng, Gamble, John King, Savage, D. E., Lagally, M. G., Friesen, Mark, Coppersmith, S. N., Eriksson, M. A.
Publikováno v:
Nat. Commun. 5:3020 (2014)
A fundamental goal in the manipulation of quantum systems is the achievement of many coherent oscillations within the characteristic dephasing time T2*[1]. Most manipulations of electron spins in quantum dots have focused on the construction and cont
Externí odkaz:
http://arxiv.org/abs/1308.0588
Autor:
Shi, Zhan, Simmons, C. B., Ward, Daniel. R., Prance, J. R., Mohr, R. T., Koh, Teck Seng, Gamble, John King, Wu, Xian., Savage, D. E., Lagally, M. G., Friesen, Mark, Coppersmith, S. N., Eriksson, M. A.
Publikováno v:
Phys. Rev. B 88, 075416 (2013)
Fast quantum oscillations of a charge qubit in a double quantum dot fabricated in a Si/SiGe heterostructure are demonstrated and characterized experimentally. The measured inhomogeneous dephasing time T2* ranges from 127ps to ~2.1ns; it depends subst
Externí odkaz:
http://arxiv.org/abs/1208.0519
Autor:
Shi, Zhan, Simmons, C. B., Prance, J. R., Gamble, John King, Koh, Teck Seng, Shim, Yun-Pil, Hu, Xuedong, Savage, D. E., Lagally, M. G., Eriksson, M. A., Friesen, Mark, Coppersmith, S. N.
Publikováno v:
Phys. Rev. Lett. 108, 140503 (2012)
We propose a quantum dot qubit architecture that has an attractive combination of speed and fabrication simplicity. It consists of a double quantum dot with one electron in one dot and two electrons in the other. The qubit itself is a set of two stat
Externí odkaz:
http://arxiv.org/abs/1110.6622
Autor:
Prance, J. R., Shi, Zhan, Simmons, C. B., Savage, D. E., Lagally, M. G., Schreiber, L. R., Vandersypen, L. M. K., Friesen, Mark, Joynt, Robert, Coppersmith, S. N., Eriksson, M. A.
Publikováno v:
Phys. Rev. Lett. 108, 046808 (2012)
We investigate the lifetime of two-electron spin states in a few-electron Si/SiGe double dot. At the transition between the (1,1) and (0,2) charge occupations, Pauli spin blockade provides a readout mechanism for the spin state. We use the statistics
Externí odkaz:
http://arxiv.org/abs/1110.6431