Theory and Optimization of 1.3- $\mu \text{m}$ Metamorphic Quantum Well Lasers

Autor: Christopher A. Broderick, Silviu Bogusevschi, Eoin P. O'Reilly

Publikováno v: IEEE Journal of Quantum Electronics. 52:1-11

The use of InGaAs metamorphic buffer layers (MBLs) to facilitate the growth of lattice-mismatched heterostructures constitutes a novel approach to developing GaAs-based long-wavelength semiconductor lasers. Such devices are attractive since they appr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2331f24014e5e3a5b92b9790e262bfa7
https://doi.org/10.1109/jqe.2015.2507590

Theory and optimisation of 1.3 and 1.55 μm (Al)InGaAs metamorphic quantum well lasers

Autor: Silviu Bogusevschi, Eoin P. O'Reilly, Christopher A. Broderick

Publikováno v: Broderick, C A, Bogusevschi, S & O’Reilly, E P 2016, Theory and optimisation of 1.3 and 1.55 μm (Al)InGaAs metamorphic quantum well lasers . in 2016 16th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2016) : Proceedings of a meeting held 11-15 July 2016, Sydney, Australia . Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Institute of Electrical and Electronics Engineers (IEEE), pp. 19-20, Numerical Simulation of Optoelectronic Devices, Sydney, Australia, 11/07/16 . https://doi.org/10.1109/NUSOD.2016.7546993

The use of InGaAs metamorphic buffer layers (MBLs) to facilitate the growth of lattice-mismatched heterostructures constitutes an attractive approach to developing long-wavelength semiconductor lasers on GaAs substrates, since they offer the improved

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::41f60a45eb7ade44dfadc13e1df8ce80
https://research-information.bris.ac.uk/ws/files/113238123/Chris_Broderick_Theory_and_optimisation_of_1.3_and_1.55_um_Al_InGaAs_metamorphic_quantum_well_lasers.pdf