Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Silvestre Salas-Rodriguez"'
Publikováno v:
2022 IEEE International Conference on Engineering Veracruz (ICEV).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47d69568e92ccb21edce13b032c347eb
https://doi.org/10.1109/icev56253.2022.9959644
https://doi.org/10.1109/icev56253.2022.9959644
Publikováno v:
2022 IEEE Latin American Electron Devices Conference (LAEDC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b39217e8167ad40916ee63b79175dccd
https://doi.org/10.1109/laedc54796.2022.9908238
https://doi.org/10.1109/laedc54796.2022.9908238
Autor:
Jaime Martinez-Castillo, Silvestre Salas-Rodriguez, Joel Molina-Reyes, Francisco López-Huerta
Publikováno v:
2021 IEEE Latin America Electron Devices Conference (LAEDC).
This paper presents a review of the most recent and relevant works about ion sensitive systems based on Thin Film Transistors (TFTs) fabricated on flexible substrates at low temperatures. Currently, supervising ion concentrations in biological soluti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07c49538c7d3315dafd8e34c7fe1fee0
https://doi.org/10.1109/laedc51812.2021.9437968
https://doi.org/10.1109/laedc51812.2021.9437968
Autor:
Uriel G. Zapata-Rodriguez, Joel Melina-Reyes, Silvestre Salas-Rodriguez, Francisco López-Huerta, Jaime Martinez-Castillo
Publikováno v:
2019 IEEE International Conference on Engineering Veracruz (ICEV).
In this manuscript, we analyze the hafnium oxide (HfO 2 ) effect as high k gate insulator on the electrical performance of planarized Hydrogenated Amorphous Silicon Germanium Thin Film Transistors, a-SiGe: H TFTs, in bottom-gate (BT), top-contact (TC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0532ee67cee77daa73e2a8224cc72420
https://doi.org/10.1109/icev.2019.8920705
https://doi.org/10.1109/icev.2019.8920705
Autor:
Joaquín Alvarado, Julio C. Tinoco, Silvestre Salas Rodriguez, A. G. Martinez-Lopez, Jean-Pierre Raskin
Publikováno v:
IEEE Transactions on Electron Devices. 60:3710-3717
Triple-gate FinFETs have demonstrated to be promising candidates to push further the performance limits of the microelectronics industry, thanks to their high immunity to short-channel effects. However, owing to their 3-D nature, high parasitic gate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2dbd42e53daca4e434be45c9a0695b97
https://doi.org/10.1109/ted.2013.2282629
https://doi.org/10.1109/ted.2013.2282629
Autor:
Jean-Pierre Raskin, Julio C. Tinoco, A. G. Martinez-Lopez, Silvestre Salas Rodriguez, Joaquín Alvarado
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 61:833-840
Triple-Gate FinFETs have been demonstrated to be promising to push further the down scaling of CMOS technology, because of their high immunity against the so-called short channel effects. However, due to their three-dimensional (3-D) architecture, st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba6ac8dab237226bf3f07ceb1a2ef428
https://doi.org/10.1109/tmtt.2012.2231697
https://doi.org/10.1109/tmtt.2012.2231697