Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Silva K. Theiss"'
Autor:
T. Diaz de la Rubia, M. D. Johnson, Silva K. Theiss, Babak Sadigh, Thomas J. Lenosky, M.J. Caturla, Jing Zhu
Publikováno v:
Thin Solid Films. 365:219-230
We review our recent work on an atomistic approach to the development of predictive process simulation tools. First-principles methods, molecular dynamics simulations, and experimental results are used to construct a database of defect and dopant ene
Publikováno v:
SPIE Proceedings.
Over the years there have been demonstrations of various methods capable of forming sub-micron features such as photo, electron beam, and imprint lithography. Generally these methods are limited to planar master tools of limited dimensional size. The
Publikováno v:
Surface Science. 257:259-273
Tunneling microscopy, thermal desorption, Rutherford backscattering, and low-energy electron diffraction are used to study the structures and coverages of the phases of Pb on the Si(111)7 × 7 surface. For room-temperature deposition at low coverage
Publikováno v:
Applied Physics Letters. 75:3790-3792
Crystallographic grain orientations at a large number of electromigration failure sites in Al(Cu) interconnects have been measured and compared to the grain orientations away from failure sites. Electron backscattered diffraction analysis reveals a p
Publikováno v:
Applied Physics Letters. 66:448-450
We use the tunneling microscope to measure the surface lattice spacing of Ge islands grown on Si(111) as a function of their height. It changes in three stages: (I) (0–50 layers tall) Rapid relaxation from near the bulk Si value, at the end of whic
Autor:
Thomas Lenosky, T. Diaz de la Rubia, M.-J. Caturla, Babak Sadigh, Silva K. Theiss, M.D. Giles, Majeed Foad
Publikováno v:
2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502).
We present a kinetic Monte Carlo model for boron diffusion, clustering and activation in ion implanted silicon. The input to the model is based on a combination of experimental data and ab initio calculations. The model shows that boron diffusion and
Autor:
M.J. Caturla, T. Diaz de la Rubia, Kevin S. Jones, Mark E. Law, G. Subramanian, Silva K. Theiss
Publikováno v:
MRS Proceedings. 610
{311) defects and dislocation loops are formed after ion-implantation and annealing of a silicon wafer. Recent Transmission Electron Microscopy studies by Li and Jones have shown that sub-threshold dislocation loops nucleate from {311} defects. In ou
Autor:
T. Diaz de la Rubia, Ant Uralt, Silva K. Theiss, Peter B. Griffin, M.C. Johnson, M.J. Caturla
Publikováno v:
MRS Proceedings. 538
We have developed a kinetic Monte Carlo (kMC) simulator that links atomic migration and binding energies determined primarily from first principles calculations to macroscopic phenomena and laboratory time scales. Input for the kMC simulation is obta
The Effect of Cu Concentration and Distribution on the Lifetimes of Submicron, Bamboo Al(Cu) Runners
Publikováno v:
MRS Proceedings. 473
We have studied the effect of Cu concentration and initial distribution on the electromigration lifetimes of 0.3 – 0.8 μm wide, ≥ 99% bamboo Al interconnects. The mechanism by which Cu reduces electromigration in polygranular interconnects may n
Autor:
J. A. Prybyla, Silva K. Theiss
Publikováno v:
MRS Proceedings. 428
We have studied the behavior of Al2Cu precipitates during electromigration in submicron runners using in situ plan view TEM. Al (0.5 wt. % Cu) runners of widths between 0.3 and 1.0 μ were stressed at temperatures between 200 and 275° C and a curren