Zobrazeno 1 - 10
of 58
pro vyhledávání: '"Silke Schön"'
Autor:
Bruno Küng, Simon Gustavsson, Theodore Choi, Ivan Shorubalko, Oliver Pfäffli, Fabian Hassler, Gianni Blatter, Matthias Reinwald, Werner Wegscheider, Silke Schön, Thomas Ihn, Klaus Ensslin
Publikováno v:
Entropy, Vol 12, Iss 7, Pp 1721-1732 (2010)
Charge sensing with quantum point-contacts (QPCs) is a technique widely used in semiconductor quantum-dot research. Understanding the physics of this measurement process, as well as finding ways of suppressing unwanted measurement back-action, are th
Externí odkaz:
https://doaj.org/article/05e2ed559a5843cb90a80d16ee89c7a0
Autor:
Silke Schön, Kirstin Casdorff, Benjamin Michen, Ingo Burgert, Hervé Bellanger, Tobias Keplinger
Publikováno v:
ACS Applied Materials & Interfaces. 9:13793-13800
The adhesion behavior of polyelectrolyte multilayers consisting of poly(diallyldimethylammonium chloride), PDDA, and poly(styrenesulfonate), PSS, toward a silicon AFM tip was studied during their build-up on wood, a chemically heterogeneous, micromet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c7596a7868d4b4dee4b69d621301e750
https://doi.org/10.1021/acsami.7b02564
https://doi.org/10.1021/acsami.7b02564
Publikováno v:
Journal of Crystal Growth. :525-528
Defect engineering is a key feature in material development for active and passive laser devices. Active devices such as surface emitting lasers require excellent material quality with low defect concentration and good strain management. In contrast,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb08760726304c75f08666b1a3360314
https://doi.org/10.1016/j.jcrysgro.2006.11.261
https://doi.org/10.1016/j.jcrysgro.2006.11.261
Publikováno v:
Journal of Crystal Growth. :570-574
Passively mode-locked solid-state lasers require semiconductor saturable absorber mirrors (SESAMs) with a recovery time up to 10–30 times longer than the final pulse duration. GaInNAs SESAMs normally have a high defect concentration that supports a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b85e9f8a7f9240670e6a422129ae264e
https://doi.org/10.1016/j.jcrysgro.2006.11.260
https://doi.org/10.1016/j.jcrysgro.2006.11.260
Publikováno v:
Journal of Crystal Growth. :556-559
In order to assess the effects of nitrogen on GaInNAs during the annealing process, we analyzed several quantum wells (QWs) with different nitrogen contents after annealing at different rapid thermal annealing (RTA) conditions. When only the RTA temp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05c5394892b407a9e15353b4abab589e
https://doi.org/10.1016/j.jcrysgro.2006.11.228
https://doi.org/10.1016/j.jcrysgro.2006.11.228
Publikováno v:
Journal of Crystal Growth. 278:239-243
We report on the growth, material and nonlinear optical properties of GaInNAs quantum wells (QWs) used in semiconductor saturable absorber mirrors (SESAMs) for passive mode locking of solid-state lasers in the telecommunication wavelength range from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::841b22d14531e03c4fdabbd35a69b676
https://doi.org/10.1016/j.jcrysgro.2004.12.069
https://doi.org/10.1016/j.jcrysgro.2004.12.069
Publikováno v:
IEE Proceedings - Optoelectronics. 151:437-441
A GaInNAs semiconductor saturable absorber mirror (SESAM) is demonstrated that is able to passively mode-lock a 1.3-μm Nd:YLF laser. The mirror was grown by molecular beam epitaxy and consists mainly of a GaInNAs single quantum well on an AlAs/GaAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68ca24fdc2eddc01d5004ff5f8ee15bb
https://doi.org/10.1049/ip-opt:20040877
https://doi.org/10.1049/ip-opt:20040877
Publikováno v:
Journal of Crystal Growth. :172-176
Semiconductor saturable absorber mirrors (SESAMs) are used for ultrashort pulse generation. They are required to support self-starting sub-10-fs pulse generation with Ti:sapphire lasers. So far conventional AlGaAs/AlAs SESAMs have been limited by the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bec520e220913747a5d023ae7acc8583
https://doi.org/10.1016/s0022-0248(01)00658-3
https://doi.org/10.1016/s0022-0248(01)00658-3
Publikováno v:
Journal of Crystal Growth. :1020-1023
Novel broadband (Ga,Al)As/CaF2 Bragg mirrors have been grown on Si(1 1 1) substrates for the first time providing large reflectance bandwidth due to a high ratio of refractive indices. Two types of interface morphology have been observed: a rough one
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4f442199a7d9663ab1ee3274e533864
https://doi.org/10.1016/s0022-0248(99)00033-0
https://doi.org/10.1016/s0022-0248(99)00033-0
Autor:
C. J. Summers, T. C. Jones, Wounjhang Park, M. Chaichimansour, Silke Schön, B. K. Wagner, W. Tong
Publikováno v:
Journal of Applied Physics. 84:6852-6858
The luminescence decay kinetics of homogeneously and delta-doped ZnS:Mn thin film phosphors was investigated. A quantitative model based on the hopping model of energy transfer theory was developed to described the concentration quenching phenomenon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09b145f5f27340ef7a5c5b2bf06bc206
https://doi.org/10.1063/1.368980
https://doi.org/10.1063/1.368980