Zobrazeno 1 - 10
of 75
pro vyhledávání: '"Silke Paul"'
Autor:
Silke Paul, Mareike de Valck
Publikováno v:
Handbuch Polizeimanagement ISBN: 9783658343873
Handbuch Polizeimanagement ISBN: 9783658343941
Handbuch Polizeimanagement ISBN: 9783658343941
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5cec7e5b0db4ccf406422212e11bef77
https://doi.org/10.1007/978-3-658-34388-0_92
https://doi.org/10.1007/978-3-658-34388-0_92
Publikováno v:
Frontiers in Psychology, Vol 15 (2024)
IntroductionPrevious research has investigated sexual orientation differences in the acoustic properties of individuals’ voices, often theorizing that homosexuals of both sexes would have voice properties mirroring those of heterosexuals of the opp
Externí odkaz:
https://doaj.org/article/212ad8ddc30c45faa460de0be6a6f611
Publikováno v:
Disease Models & Mechanisms, Vol 17, Iss 6 (2024)
Externí odkaz:
https://doaj.org/article/7723f59479d1411ba4153758773c3ebb
Autor:
H. Kheyrandish, C. Dupré, Pier-Francesco Fazzini, Filadelfo Cristiano, Wilfried Lerch, Thomas Ernst, Silke Paul, K.K. Bourdelle
Publikováno v:
Materials Science and Engineering: B. :256-259
The detailed knowledge of the effects of the buried interface on defect evolution in silicon-on-insulator wafers is mandatory to accurately control dopant diffusion and activation. To be able to study this phenomenon, quantitative data on end-of-rang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fec0d970dc2042877877f0d4f7f61bd
https://doi.org/10.1016/j.mseb.2008.08.018
https://doi.org/10.1016/j.mseb.2008.08.018
Autor:
H. Kheyrandish, A. Pakfar, A. Martinez-Limia, Clement Tavernier, Peter Pichler, Silke Paul, Wilfried Lerch
Publikováno v:
Materials Science and Engineering: B. :211-215
The possibility of using solid phase epitaxial regrowth (SPER) for activation of arsenic after amorphizing implantation in silicon is explored in this contribution and compared to spike annealing and published flash-annealing experiments. SPER takes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0da4d6d0433df91200cfdc3102bb3057
https://doi.org/10.1016/j.mseb.2008.09.045
https://doi.org/10.1016/j.mseb.2008.09.045
Autor:
Filadelfo Cristiano, Silke Paul, H. Kheyrandish, Wilfried Lerch, J. Niess, Fabrice Severac, J. Gelpey, Pier-Francesco Fazzini, D. Bolze, A. Martinez-Limia, S. McCoy, Peter Pichler
Publikováno v:
Materials Science and Engineering: B. :3-13
Millisecond annealing as an equipment technology provides temperature profiles which favour dopant activation but nearly eliminate dopant diffusion to form extremely shallow, highly electrically activated junctions. For the 45-nm technology node and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3db24e0bd46a15e27e5cdcc7e725216c
https://doi.org/10.1016/j.mseb.2008.08.017
https://doi.org/10.1016/j.mseb.2008.08.017
Autor:
Wilfried Lerch, Eléna Bedel-Pereira, H. Kheyrandish, Fabrice Severac, Filadelfo Cristiano, Silke Paul
Publikováno v:
Materials Science and Engineering: B. :225-228
In this paper, we present an empirical method for the self-consistent interpretation of SIMS and Hall effect measurements of boron-doped ultra-shallow junctions that allows to estimate the activation level of the doped layers (maximum active dopant c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0d58ab7339395d5ce48a0ccfb10fd88
https://doi.org/10.1016/j.mseb.2008.08.013
https://doi.org/10.1016/j.mseb.2008.08.013
Publikováno v:
Materials Science and Engineering: B. :20-23
A set of advanced models implemented into the simulator Sentaurus Process was applied to simulate ultra shallow junction formation by flash lamp annealing (FLA). The full path transient enhanced diffusion model includes equations for small interstiti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf0daa62e4f458b455662db717b00c57
https://doi.org/10.1016/j.mseb.2008.10.005
https://doi.org/10.1016/j.mseb.2008.10.005
Autor:
Wilfried Lerch, Silke Paul
Publikováno v:
Materials Science Forum. :207-228
This work presents a summary on the use of rapid thermal processing for implant annealing. It gives a short historical overview of rapid thermal processing systems and the first implant anneal processes on these newly developed tools. We then looked
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::469e83e6a4c453624e749cb3c8a17288
https://doi.org/10.4028/www.scientific.net/msf.573-574.207
https://doi.org/10.4028/www.scientific.net/msf.573-574.207
Autor:
Andrew J. Smith, Silke Paul, Russell M. Gwilliam, B. Colombeau, Nick Bennett, N. E. B. Cowern, B.J. Sealy, Roger P. Webb, A. Pakfar, Wilfried Lerch
Publikováno v:
Materials Science Forum. :295-304
This paper reviews the physics and the potential application of ion-implanted vacancies for high-performance B-doped ultra-shallow junctions. By treatment of silicon films with vacancygenerating implants prior to boron implantation, electrically acti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81f3eea6f1637e0d5350332faec265a5
https://doi.org/10.4028/www.scientific.net/msf.573-574.295
https://doi.org/10.4028/www.scientific.net/msf.573-574.295