Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers

Autor: Maya Marinova, Sandrine Juillaguet, Teddy Robert, Efstathios K. Polychroniadis, Anne Henry, Jean Camassel

Publikováno v: Materials Science Forum
Materials Science Forum, 2011, Materials Science Forum, 679-680, pp.314-317. ⟨10.4028/www.scientific.net/MSF.679-680.314⟩

International audience; Both 3C and 6H stacking faults have been observed in a low doped 4H-SiC epitaxial layer grown in a hot-wall CVD reactor on a heavily doped (off-axis) 4H-SiC substrate. They appear differently on the different parts of sample,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9ba8d0f33889b447a29bd31ca73ea4d4
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-73603