Zobrazeno 1 - 10
of 4 138
pro vyhledávání: '"Silicon Carbide (SiC"'
Autor:
Young Jo Kim, Youngboo Moon, Jeong Hyun Moon, Hyoung Woo Kim, Wook Bahng, Hongsik Park, Young Jun Yoon, Jae Hwa Seo
Publikováno v:
Journal of Science: Advanced Materials and Devices, Vol 9, Iss 3, Pp 100765- (2024)
In this study, we fabricated vertical Schottky barrier diodes (SBDs) based on wide bandgap semiconductor beta-phase gallium oxide (β-Ga2O3) and silicon carbide (SiC), respectively, and conducted proton irradiation experiments to analyze the radiatio
Externí odkaz:
https://doaj.org/article/fe363854dced4a62a854bf4586c557be
Autor:
Le Lu, Tianlong Liu, Zhaofeng Chen, Fei Wang, Mengmeng Yang, Qiong Wu, Lixia Yang, Huanyong Li
Publikováno v:
Journal of Advanced Ceramics, Vol 13, Iss 2, Pp 255-262 (2024)
Flash sintering (FS) is a novel technique for rapidly densifying silicon carbide (SiC) ceramics. This work achieved a rapid sintering of SiC ceramics by the utilization of ultra-high temperature flash sintering within 60 s. Pyrolysis carbon (PyC) “
Externí odkaz:
https://doaj.org/article/0bdf5f0b891f488786e19062b66d2e47
Autor:
Sanket Parashar, Nithin Kolli, Raj Kumar Kokkonda, Ajit Kanale, Subhashish Bhattacharya, Bantval Jayant Baliga
Publikováno v:
IEEE Open Journal of the Industrial Electronics Society, Vol 5, Pp 1058-1084 (2024)
This article addresses the mitigation of dynamic voltage imbalance in series-connected 10 kV silicon carbide (SiC) JBS diodes within a three-level NPC (3L-NPC) converter using active turn-off delay control across complementary series-connected 10 kV
Externí odkaz:
https://doaj.org/article/300bbb648f6c4b02ae88fa871978a5ef
Publikováno v:
CSEE Journal of Power and Energy Systems, Vol 10, Iss 4, Pp 1799-1807 (2024)
Compared to Si devices, the junction temperature of SiC devices is more critical due to the reliability concern introduced by immature packaging technology applied to new material. This paper proposes a practical SiC MOSFET junction temperature monit
Externí odkaz:
https://doaj.org/article/92a5e615a6e742c9ab2a29528746a92c
Publikováno v:
IEEE Access, Vol 12, Pp 86886-86895 (2024)
This paper describes the effects of power device characteristics on the harmonics of the inverter output voltage and magnetic field leakage in a wireless power transfer system for electric vehicles with phase shift control and the suppression method
Externí odkaz:
https://doaj.org/article/8dd9d4315c084084bea4a606b87e9905
Publikováno v:
IEEE Access, Vol 12, Pp 86896-86905 (2024)
Electromagnetic interference poses enormous challenges for feedback-controlled systems, especially at medium-voltage levels. As power converters are increasingly utilized for medium- and high-voltage applications, optically-based measurement methods
Externí odkaz:
https://doaj.org/article/065909e2099640f683ef8de6553232c1
Publikováno v:
IEEE Open Journal of Industry Applications, Vol 5, Pp 235-252 (2024)
The unclamped inductive switching (UIS) measurements can be categorized as “low energy” and “high energy” avalanche. The conventional approach to these tests is to increase the stress by either increasing the pulse length, or decreasing the i
Externí odkaz:
https://doaj.org/article/8b02c427ab1145458d3e1a16f77f0c07
Autor:
Shane Winters, Nikung Thapa, Luke D. Doucette, Jonathan Kincaid, Qingsong Cui, Nuri W. Emanetoglu, Mauricio Pereira da Cunha
Publikováno v:
IEEE Open Journal of Industry Applications, Vol 5, Pp 63-74 (2024)
This article reports on the development of key components required for a self-powered oscillator unit designed to wirelessly transmit its signal under full insertion in high-temperature (HT) harsh-environments (HE), such as those present in power pla
Externí odkaz:
https://doaj.org/article/4bb5fed0e88b4dcea47fc830b86109be
Publikováno v:
Energies, Vol 17, Iss 18, p 4570 (2024)
This study evaluates the annual global energy-savings potential of various power electronics applications utilizing commercial silicon carbide (SiC) wide bandgap (WBG)-based power converters. As the first analysis to focus on real market products, ou
Externí odkaz:
https://doaj.org/article/11e16b77aec447e4aa521bc167e6b2a5
Publikováno v:
Energies, Vol 17, Iss 17, p 4523 (2024)
SiC MOSFETs have been a game-changer in the domain of power electronics, thanks to their exceptional electrical traits. They are endowed with a high breakdown voltage, reduced on-resistance, and superior thermal conductivity, which make them supremel
Externí odkaz:
https://doaj.org/article/7ab4a4588f034d72ad1a3b1ed1ee2e39