Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Siliciummaterialcharakterisierung"'
Publikováno v:
IEEE Transactions on Electron Devices. 58:2874-2877
Microscopic laser-doped regions in advanced solar cell concepts are analyzed to determine the doping density and to identify the damage caused by the laser process. For these investigations, microphotoluminescence spectroscopy and micro-Raman spectro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bcd54106473d6b75f8981183da7fa234
https://doi.org/10.1109/ted.2011.2158649
https://doi.org/10.1109/ted.2011.2158649
Publikováno v:
Solar Energy Materials and Solar Cells. 95:1011-1018
Reliable process control or predictions of solar cell efficiencies from minority carrier lifetimes on silicon wafers require precise lifetime measurements. For inhomogeneous material quality this implies the necessity of adequately averaged spatially
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a8c1d2e19b407b2c7267c685282cd562
https://doi.org/10.1016/j.solmat.2010.12.016
https://doi.org/10.1016/j.solmat.2010.12.016
Autor:
Martin Kasemann, Wolfram Kwapil, Jonas Schön, Holger Habenicht, M. Blazek, Wilhelm Warta, Paul Gundel, Martin C. Schubert
Publikováno v:
Solar Energy Materials and Solar Cells. 94:1451-1456
We present progress of the analysis of multicrystalline silicon and of improvements of our understanding of material related performance limits of solar cells. Aspects covered are advanced numerical simulation, experimental results on carrier lifetim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f0283f872d51a63415115e3f5d7ca5f8
https://doi.org/10.1016/j.solmat.2010.04.010
https://doi.org/10.1016/j.solmat.2010.04.010
Publikováno v:
physica status solidi (a). 207:436-441
Internal stress is strongly correlated with the mechanical stability of silicon wafers and with the distribution of defects and thus the minority carrier lifetime, which is often the limiting parameter for multicrystalline (me) silicon solar cells. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fa6e5dff8a0fe77ab408670c125f5933
https://doi.org/10.1002/pssa.200925368
https://doi.org/10.1002/pssa.200925368
Publikováno v:
Journal of Applied Physics. 94:4139-4143
The measurement of infrared absorption of excess carriers is a successful technique by which images of the excess free carrier density and recombination lifetime in silicon can be generated. Carrier density imaging (CDI) has recently been developed a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70a407916dfdf8e5b69517fc7131efe9
https://doi.org/10.1063/1.1600531
https://doi.org/10.1063/1.1600531
Autor:
D. Suwito, Paul Gundel, Martin C. Schubert, Robert Woehl, Friedemann D. Heinz, Johannes Giesecke, Wilhelm Warta, Jan Benick
Publikováno v:
Nanoscale Research Letters, Vol 6, Iss 1, p 197 (2011)
Nanoscale Research Letters
Nanoscale Research Letters
Micro-Raman (μRS) and micro-photoluminescence spectroscopy (μPLS) are demonstrated as valuable characterization techniques for fundamental research on silicon as well as for technological issues in the photovoltaic production. We measure the quanti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::da31c531fa05944d5448ce82aa41d76c
https://publica.fraunhofer.de/handle/publica/226549
https://publica.fraunhofer.de/handle/publica/226549
Minority carrier lifetime is the most crucial material parameter for the performance of a silicon solar cell. While numerous methods exist to determine carrier lifetime on solar cell precursors prior to metallization, only very few techniques are cap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f8ab9dd4d33ab5dd5e8e8e282a36cae7
https://publica.fraunhofer.de/handle/publica/225055
https://publica.fraunhofer.de/handle/publica/225055
We studied the behavior of iron in multicrystalline silicon during phosphorus diffusion by spatially resolved measurements and physical modeling. We present improvements to the previously used models for internal gettering in multicrystalline silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::5d6e808512befcf2651816e5c5b3e6d2
https://publica.fraunhofer.de/handle/publica/224892
https://publica.fraunhofer.de/handle/publica/224892
Autor:
Woehl, R., Gundel, P., Krause, J., Rühle, K., Heinz, F.D., Rauer, M., Schmiga, C., Schubert, M.C., Warta, W., Biro, D.
Surface-passivated and surface-unpassivated aluminum-alloyed p +-layers are characterized. By varying the firing conditions and the thickness of the screen-printed aluminum paste, different sheet resistances Rsh of the p+-layer were fabricated. The e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::330401e8ca2c7c845b557f59bd9d8a44
https://publica.fraunhofer.de/handle/publica/225036
https://publica.fraunhofer.de/handle/publica/225036
Autor:
Holger Habenicht, Paul Gundel, Martin C. Schubert, Wilhelm Warta, Jonas Schön, Wolfram Kwapil
Metals are detrimental to silicon solar cells in two ways: (i) they typically introduce defect levels in the bandgap, leading to enhanced carrier recombination and thus to lower voltage in solar cells; and (ii) they may, in the form of precipitates,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d4e8f50092d1b15878ad2aa3fb5b6454
https://publica.fraunhofer.de/handle/publica/221727
https://publica.fraunhofer.de/handle/publica/221727