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pro vyhledávání: '"Sik K. Lui"'
Autor:
Sik K. Lui, Lei Zhang, Madhur Bobde, Anup Bhalla, Lingpeng Guan, Hamza Yilmaz, Karthik Padmanabhan
Publikováno v:
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
In this paper, we present a novel lateral/vertical hybrid super-junction structure that breaks the fundamental trade-off between the Rds.A and Charge imbalance window for a Super-Junction MOSFET. This device structure can continue the scaling of Supe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1c1b856b645ad21e697a744c5c92443
https://doi.org/10.1109/ispsd.2018.8393625
https://doi.org/10.1109/ispsd.2018.8393625
Publikováno v:
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Trade-offs between the On Resistance and Linear Mode performance have been compared for different Low Voltage superjunction cell structures, including stripe-cell, closed-cell & orthogonal-cell. The closed-cell has measured R SP of 4.4mΩ·mm2, which
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b798e5e6fcaee378d60052b699637f3
https://doi.org/10.1109/ispsd.2018.8393669
https://doi.org/10.1109/ispsd.2018.8393669