Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Sijung Yoo"'
Autor:
Seung-Min Chung, Hyung Keun Kim, Taeyoon Lee, Minkyu Lee, Seok Man Hong, Sijung Yoo, Myoungsub Kim, Youngjun Kim, Tae-Hoon Kim, Hyungjun Kim
Publikováno v:
Journal of Materials Chemistry C. 9:6006-6013
Three-dimensional (3D) cross-point (X-point) technology, including amorphous chalcogenide-based ovonic threshold switching (OTS) selectors, is bringing new changes to the memory hierarchy for high-performance computing systems. To prepare for future
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43524239b3c491fbb285acd323ee1b0c
https://doi.org/10.1039/d1tc00650a
https://doi.org/10.1039/d1tc00650a
Autor:
Sijung Yoo, Donghoon Kim, Yoon Mo Koo, Sujee Kim Wooju Jeong, Hyungjoon Shim, Won-Jun Lee, Beom Seok Lee, Seungyun Lee, Hyejung Choi, Hyung Dong Lee, Taehoon Kim, Myung-Hee Na
Publikováno v:
2022 IEEE International Memory Workshop (IMW).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce352b9bc0034b70e4935886f30800f5
https://doi.org/10.1109/imw52921.2022.9779247
https://doi.org/10.1109/imw52921.2022.9779247
Publikováno v:
IEEE Transactions on Electron Devices. 67:1454-1459
We developed an electro-thermal model for cross-point phase-change memory (X-PCM) and compared the calculation values with the experimental results. In order to simulate the electro-thermal phenomenon such as thermal disturbance (TDB) of victim cells
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5efe25828abd0e03b588142575203a1
https://doi.org/10.1109/ted.2019.2960444
https://doi.org/10.1109/ted.2019.2960444
Autor:
Felix Cüppers, Rainer Waser, Sijung Yoo, Cheol Seong Hwang, Carsten Funck, Dirk J. Wouters, Stephan Menzel, Susanne Hoffmann-Eifert, Hehe Zhang
Publikováno v:
ACS Applied Materials & Interfaces. 10:29766-29778
Redox-type resistive random access memories based on transition-metal oxides are studied as adjustable two-terminal devices for integrated network applications beyond von Neumann computing. The pre...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::260c765b071e93d8bc8ccc7b821ec48b
https://doi.org/10.1021/acsami.8b09068
https://doi.org/10.1021/acsami.8b09068
Publikováno v:
Journal of Materials Chemistry C. 6:5025-5032
Ge–Sb–Se–Te (GSST) quaternary films were prepared through atomic layer deposition (ALD) to ensure their amorphous stability for ovonic threshold switching (OTS) applications. Se, a typical phase-change material, was incorporated into Ge–Sb–
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1bfdcd1150cea4af7f0744fe6fe0bb2
https://doi.org/10.1039/c8tc01041b
https://doi.org/10.1039/c8tc01041b
Autor:
Cheol Seong Hwang, Chanyoung Yoo, Sergei A. Ivanov, Sang Gyun Kim, Taehong Gwon, Eui-Sang Park, Taeyong Eom, Moo-Sung Kim, Manchao Xiao, Sijung Yoo, Iain Buchanan
Publikováno v:
Chemistry of Materials. 29:8065-8072
In this paper, a new atomic layer deposition (ALD) process for depositing binary GeTe and ternary Ge–Sb–Te thin films is reported, where HGeCl3 and ((CH3)3Si)2Te were used as Ge and Te precursors, respectively. The precursors reacted together to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb37960fbbbae5dad7028fad416949b2
https://doi.org/10.1021/acs.chemmater.7b01236
https://doi.org/10.1021/acs.chemmater.7b01236
Autor:
Sijung Yoo, Manchao Xiao, Sergei Vladimirovich Ivanov, Deok-Yong Cho, Iain Buchanan, Cheol Seong Hwang, Taehong Gwon, Taeyong Eom, Moo-Sung Kim, Han-Koo Lee
Publikováno v:
Chemistry of Materials. 28:7158-7166
In this report, a new method to deposit GeTe thin film by atomic layer deposition (ALD) is described. Ge(N(Si(CH3)3)2)2, in which Ge is in +2 oxidation state, and ((CH3)3Si)2Te were used as Ge and Te precursors, respectively. GeTe films were deposite
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2126955383e3fe3143d5b09c15ce069
https://doi.org/10.1021/acs.chemmater.6b03704
https://doi.org/10.1021/acs.chemmater.6b03704
Publikováno v:
ACS Photonics. 3:1265-1270
The multilayered optical coating whose structure consists of optical cavity and multiple layers of ultrathin phase change material (PCM) film is presented. The color changing is enabled via transition between amorphous and crystalline phases of PCM,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83022c0c4f72be66b8d4df99ae6a504a
https://doi.org/10.1021/acsphotonics.6b00246
https://doi.org/10.1021/acsphotonics.6b00246
Autor:
Hehe, Zhang, Sijung, Yoo, Stephan, Menzel, Carsten, Funck, Felix, Cüppers, Dirk J, Wouters, Cheol Seong, Hwang, Rainer, Waser, Susanne, Hoffmann-Eifert
Publikováno v:
ACS applied materialsinterfaces. 10(35)
Redox-type resistive random access memories based on transition-metal oxides are studied as adjustable two-terminal devices for integrated network applications beyond von Neumann computing. The prevailing, so-called, counter-eight-wise (c8w) polarity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::c2635bf4a2193dbaec38b9d567aaefa6
https://pubmed.ncbi.nlm.nih.gov/30088755
https://pubmed.ncbi.nlm.nih.gov/30088755
Autor:
Woohyun, Kim, Sijung, Yoo, Chanyoung, Yoo, Eui-Sang, Park, Jeongwoo, Jeon, Young Jae, Kwon, Kyung Seok, Woo, Han Joon, Kim, Yoon Kyeung, Lee, Cheol Seong, Hwang
Publikováno v:
Nanotechnology. 29(36)
The ovonic threshold switch (OTS) based on the voltage snapback of amorphous chalcogenides possesses several desirable characteristics: bidirectional switching, a controllable threshold voltage (V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::299e726d883922c2355af0922a11bf5b
https://pubmed.ncbi.nlm.nih.gov/29920183
https://pubmed.ncbi.nlm.nih.gov/29920183