Zobrazeno 1 - 10
of 71
pro vyhledávání: '"Sijun Kim"'
Nonoperative Management of Iatrogenic Right Atrial Appendage Pseudoaneurysm During Catheter Ablation
Autor:
Ngoda Manongi, MD, MS, Iosif Gulkarov, MD, Sijun Kim, DO, Emmanuel Moustakakis, MD, Seth Goldbarg, MD
Publikováno v:
JACC: Case Reports, Vol 29, Iss 1, Pp 102147- (2024)
Atrial pseudoaneurysms are exceedingly rare. Cardiac pseudoaneurysms are at risk for rupture, which may be catastrophic and require emergent thoracotomy for definitive treatment. We report a case of right atrial appendage perforation during catheter
Externí odkaz:
https://doaj.org/article/076f0204b1b84affbc76c736dcb0cfb3
Autor:
Inho Seong, Sijun Kim, Woobeen Lee, Youngseok Lee, Chulhee Cho, Wonnyoung Jeong, Minsu Choi, Byeongyeop Choi, Huichan Seo, Sangheon Song, Shinjae You
Publikováno v:
Applied Physics Express, Vol 17, Iss 9, p 096001 (2024)
A global model (GM) assumes ion energy ( $\varepsilon $ ) on the electrode equals the time-averaged sheath voltage ( ${\left\langle {V}_{{\rm{sh}}}\left(t\right)\right\rangle }_{t}$ ). However, using particle-in-cell simulation, we found that $\varep
Externí odkaz:
https://doaj.org/article/d199998039d7433d9b8e17a2a81e3b24
Autor:
Inho Seong, Sijun Kim, Minsu Choi, Woobeen Lee, Wonnyoung Jeong, Chulhee Cho, Yebin You, Youngseok Lee, Youbin Seol, Shinjae You
Publikováno v:
Materials, Vol 16, Iss 17, p 5746 (2023)
The understanding of ion dynamics in plasma applications has received significant attention. In this study, we examined these effects between He and Ar species, focusing on the Ar ion flux on the substrate. To control heterogeneous collisions, we var
Externí odkaz:
https://doaj.org/article/33c43fe95ad24d479f006f4d0a852f83
Autor:
Minsu Choi, Youngseok Lee, Yebin You, Chulhee Cho, Wonnyoung Jeong, Inho Seong, Byeongyeop Choi, Sijun Kim, Youbin Seol, Shinjae You, Geun Young Yeom
Publikováno v:
Materials, Vol 16, Iss 16, p 5624 (2023)
This paper proposes the use of environmentally friendly alternatives, C6F6 and C4H2F6, as perfluorocarbon (PFC) and hydrofluorocarbon (HFC) precursors, respectively, for SiO2 plasma etching, instead of conventional precursors C4F8 and CHF3. The study
Externí odkaz:
https://doaj.org/article/eb7cc9d5599c426b9a57e264a096c7f0
Autor:
Wonnyoung Jeong, Sijun Kim, Youngseok Lee, Chulhee Cho, Inho Seong, Yebin You, Minsu Choi, Jangjae Lee, Youbin Seol, Shinjae You
Publikováno v:
Materials, Vol 16, Iss 10, p 3820 (2023)
As the process complexity has been increased to overcome challenges in plasma etching, individual control of internal plasma parameters for process optimization has attracted attention. This study investigated the individual contribution of internal
Externí odkaz:
https://doaj.org/article/0dd052cbc18346639f8e2103d69f7eca
Autor:
Chulhee Cho, Sijun Kim, Youngseok Lee, Inho Seong, Wonnyoung Jeong, Yebin You, Minsu Choi, Shinjae You
Publikováno v:
Materials, Vol 16, Iss 7, p 2762 (2023)
Despite over 90 years of study on the emissive probe, a plasma diagnostic tool used to measure plasma potential, its underlying physics has yet to be fully understood. In this study, we investigated the voltages along the hot filament wire and emitti
Externí odkaz:
https://doaj.org/article/3c4c1867577448b883d73f9d14d3e120
Autor:
Inho Seong, Jinho Lee, Sijun Kim, Youngseok Lee, Chulhee Cho, Jangjae Lee, Wonnyoung Jeong, Yebin You, Shinjae You
Publikováno v:
Nanomaterials, Vol 12, Iss 22, p 3963 (2022)
Recently, the uniformity in the wafer edge area that is normally abandoned in the fabrication process has become important for improving the process yield. The wafer edge structure normally has a difference of height between wafer and electrode, whic
Externí odkaz:
https://doaj.org/article/ef4bcef6eb2f48a29b2077ac13b73dc8
Autor:
Youngseok Lee, Yebin You, Chulhee Cho, Sijun Kim, Jangjae Lee, Minyoung Kim, Hanglim Lee, Youngjun You, Kyungman Kim, ShinJae You
Publikováno v:
Micromachines, Vol 13, Iss 11, p 1856 (2022)
Direct wafer bonding is one of the most attractive techniques for next-generation semiconductor devices, and plasma has been playing an indispensable role in the wider adoption of the wafer bonding technique by lowering its process temperature. Altho
Externí odkaz:
https://doaj.org/article/9da6aa79113d4887b9296d4acbaa5444
Autor:
Youngseok Lee, Heejung Yeom, Daehan Choi, Sijun Kim, Jangjae Lee, Junghyung Kim, Hyochang Lee, ShinJae You
Publikováno v:
Nanomaterials, Vol 12, Iss 21, p 3828 (2022)
In the semiconductor industry, fluorocarbon (FC) plasma is widely used in SiO2 etching, with Ar typically employed in the dilution of the FC plasma due to its cost effectiveness and accessibility. While it has been reported that plasmas with other no
Externí odkaz:
https://doaj.org/article/ab741a0d8c9c4316b096f05edf676672
Low-Temperature Plasma Diagnostics to Investigate the Process Window Shift in Plasma Etching of SiO2
Publikováno v:
Sensors, Vol 22, Iss 16, p 6029 (2022)
As low-temperature plasma plays an important role in semiconductor manufacturing, plasma diagnostics have been widely employed to understand changes in plasma according to external control parameters, which has led to the achievement of appropriate p
Externí odkaz:
https://doaj.org/article/d05cedfa4b964557827b5f806a300f74