Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Sih-Han Lee"'
Autor:
Chih-Sheng Lin, Heng-Yuan Lee, Ming-Jer Kao, Ming-Jinn Tsai, Ching-Chih Hsu, Wen-Pin Lin, Frederick T. Chen, Tzu-Kun Ku, Sih-Han Lee, Meng-Fan Chang, Szu-Chieh Liu, Yu-Sheng Chen, Chia-Chen Kuo, Keng-Li Su, Pei-Ling Tseng, Kan-Hsueh Tsai, Shyh-Shyuan Sheu
Publikováno v:
A-SSCC
This study demonstrated a nonvolatile look-up table (nvLUT) that involves using resistive random access memory (ReRAM) cells with normally-off and instant-on functions for suppressing standby current. Compared with the conventional static random acce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb7b8cf1092cb34fce2b0574d2835cab
https://doi.org/10.1109/asscc.2014.7008878
https://doi.org/10.1109/asscc.2014.7008878
Autor:
Heng-Yuan Lee, Keng-Li Su, Frederick T. Chen, Sih-Han Lee, Ching-Chih Hsu, Tzu-Kun Ku, Chih-He Lin, Meng-Fan Chang, Yu-Sheng Chen, Min-Chuan Wang, Pang-Shiu Chen, Tsai-Kan Chien, Lin Chih-Sheng, Shyh-Shyuan Sheu, Ming-Jinn Tsai, Ming-Jer Kao, Szu-Chieh Liu, Pei-Ling Tseng, Chia-Chen Kuo, Wen-Pin Lin
Publikováno v:
2013 IEEE Asian Solid-State Circuits Conference (A-SSCC).
This study demonstrates a new 7T2R nonvolatile SRAM (nvSRAM) with 3D ReRAM stacked structure for normally-off computing application. With this structure, the fully performance of SRAM can work well in active mode, and reduce the leakage current in po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e8bd631bb5f7340ff6b6c214d254330
https://doi.org/10.1109/asscc.2013.6691028
https://doi.org/10.1109/asscc.2013.6691028