Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Siew-Fong Choy"'
Autor:
Siew Fong Choy
Publikováno v:
Proceedings of the 17th International Conference on New Trends in Fatigue and Fracture ISBN: 9783319703640
Multiple cracks were observed around the steel outlet guide vane bolt holes of an aluminium (A2618) casing during overhaul. Contact witness marks of the bolted steel vanes and corrosion scale/fibrils were observed around the bolt holes. Fractographic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c3bafc4548c8769721c6c761e27084e
https://doi.org/10.1007/978-3-319-70365-7_30
https://doi.org/10.1007/978-3-319-70365-7_30
Autor:
Siew-Fong Choy, Eng Huat Toh, Guo-Qiang Lo, Ganesh S. Samudra, Yee-Chia Yeo, Grace Huiqi Wang, Lap Chan
Publikováno v:
2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
This paper reports the first demonstration of strain engineering in impact-ionization MOS (I-MOS) transistors for performance enhancement. An epitaxial silicon-carbon (Si0.99C0.01) source/drain was integrated in a CMOS-compatible I-MOS fabrication pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::483bc84cf872f47207dfb7b97a24cd4e
https://doi.org/10.1109/vtsa.2007.378931
https://doi.org/10.1109/vtsa.2007.378931
Autor:
Huiqi Wang, Ganesh S. Samudra, Kah-Wee Ang, Siew-Fong Choy, Yee-Chia Yeo, Yihua Wang, N. Balasubramanian, King-Jien Chui, Lai-Yin Wong, Anuj Madan, Chih-Hang Tung, Ming-Fu Li
Publikováno v:
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
This paper reports a novel technique to fabricate uniaxial compressive strained p-channel transistors with silicon-germanium (SiGe) source and drain (S/D) stressors. The process involves local Ge condensation of a selectively grown SiGe region, thus
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dffbce1e72609f999aad2220564d382a
https://doi.org/10.1109/iedm.2005.1609389
https://doi.org/10.1109/iedm.2005.1609389
Autor:
Yong-Lim Foo, Siew-Fong Choy, Yee-Chia Yeo, Eng Huat Toh, Grace Huiqi Wang, Chih-Hang Tung, Ganesh S. Samudra
Publikováno v:
Applied Physics Letters. 89:053109
An improved fabrication scheme for forming strained SiGe on insulator (SGOI) is demonstrated. Cyclical thermal oxidation and annealing (CTOA) process is introduced to mitigate issues associated with surface roughening and nonuniformity due to increas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fabcaa751b041ddd4565d0b2c3dedc0a
https://doi.org/10.1063/1.2267663
https://doi.org/10.1063/1.2267663
Autor:
King-Jien Chui, Kah-Wee Ang, Anuj Madan, Huiqi Wang, Chih-Hang Tung, Lai-Yin Wong, Yihua Wang, Siew-Fong Choy, Balasubramanian, N., Ming Fu Li, Ganesh Samudra, Yee-Chia Yeo
Publikováno v:
IEEE International Electron Devices Meeting, 2005. IEDM Technical Digest; 2005, p493-496, 4p
Autor:
Siew Fong Choy, T.P., Lim, Vanissa Sei Wei, Gopalakrishan, R., Trigg, Alastair, Bera, Lakshmi Kanta, Matthew, Shajan, Balasubramanian, N., Moon-Sig Joo, N., Byung-Jin Cho, N., Chia-Ching Yeo, N.
Publikováno v:
AIP Conference Proceedings; 2003, Vol. 683 Issue 1, p176-180, 5p
Autor:
Grace Huiqi Wang, Eng-Huat Toh, Yong-Lim Foo, Chih-Hang Tung, Siew-Fong Choy, Samudra, Ganesh, Yee-Chia Yeo
Publikováno v:
Applied Physics Letters; 7/31/2006, Vol. 89 Issue 5, p053109, 3p, 2 Diagrams, 1 Chart, 2 Graphs
Publikováno v:
2007 International Symposium on VLSI Technology, Systems & Applications (VLSI-TSA); 2007, p1-2, 2p