Zobrazeno 1 - 10
of 971
pro vyhledávání: '"Siegfried Selberherr"'
Publikováno v:
Micromachines, Vol 15, Iss 5, p 568 (2024)
In advancing the study of magnetization dynamics in STT-MRAM devices, we employ the spin drift–diffusion model to address the back-hopping effect. This issue manifests as unwanted switching either in the composite free layer or in the reference lay
Externí odkaz:
https://doaj.org/article/e45f3ce0861e4e449f0bf04eb5d5877f
Autor:
Simone Fiorentini, Mario Bendra, Johannes Ender, Roberto L. de Orio, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-13 (2022)
Abstract Designing advanced single-digit shape-anisotropy MRAM cells requires an accurate evaluation of spin currents and torques in magnetic tunnel junctions (MTJs) with elongated free and reference layers. For this purpose, we extended the analysis
Externí odkaz:
https://doaj.org/article/cb96423893e34032855a31a74d44d3bf
Autor:
Tibor Grasser, Siegfried Selberherr
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 2 (2023)
Negative bias temperature instability is regarded as one of the most important reliability concerns of highly scaled PMOS transistors. As a consequence of the continuous downscaling of semiconductor devices this issue has become even more important o
Externí odkaz:
https://doaj.org/article/c2cee8f7c33a4ae1a08c4cd9ac0b465c
Autor:
Tomáš Hadámek, Nils Petter Jørstad, Roberto Lacerda de Orio, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov
Publikováno v:
Micromachines, Vol 14, Iss 8, p 1581 (2023)
We employ a fully three-dimensional model coupling magnetization, charge, spin, and temperature dynamics to study temperature effects in spin-orbit torque (SOT) magnetoresistive random access memory (MRAM). SOTs are included by considering spin curre
Externí odkaz:
https://doaj.org/article/f38cf12742eb4f27b968073e7929ad26
Autor:
Simone Fiorentini, Nils Petter Jørstad, Johannes Ender, Roberto Lacerda de Orio, Siegfried Selberherr, Mario Bendra, Wolfgang Goes, Viktor Sverdlov
Publikováno v:
Micromachines, Vol 14, Iss 5, p 898 (2023)
Because of their nonvolatile nature and simple structure, the interest in MRAM devices has been steadily growing in recent years. Reliable simulation tools, capable of handling complex geometries composed of multiple materials, provide valuable help
Externí odkaz:
https://doaj.org/article/55e4d69ae37746078a55b4c8e28b5b51
Autor:
Lado Filipovic, Siegfried Selberherr
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 476-483 (2021)
The persistent advancements made in the scaling and vertical implementation of front-end-of-line transistors has reached a point where the back-end-of-line metallization has become the bottleneck to circuit speed and performance. The continued scalin
Externí odkaz:
https://doaj.org/article/cd697e2186aa4407962821b8554d02c0
Autor:
Johannes Ender, Simone Fiorentini, Roberto L. De Orio, Wolfgang Goes, Viktor Sverdlov, Siegfried Selberherr
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 456-463 (2021)
As scaling of the feature size - the main driving force behind an outstanding increase of the performance of modern electronic circuits - displays signs of saturation, the main focus of engineering research in microelectronics shifts towards finding
Externí odkaz:
https://doaj.org/article/ffd89c9f04be43b0a9e6e94e1013bb54
Autor:
Alexander Toifl, Michael Quell, Xaver Klemenschits, Paul Manstetten, Andreas Hossinger, Siegfried Selberherr, Josef Weinbub
Publikováno v:
IEEE Access, Vol 8, Pp 115406-115422 (2020)
We present numerical methods to enable accurate and robust level-set based simulation of anisotropic wet etching and non-planar epitaxy for semiconductor fabrication. These fabrication techniques are characterized by highly crystal orientation-depend
Externí odkaz:
https://doaj.org/article/1ab6eb9ab6be476db6c37aafcdda40a3
Publikováno v:
Nano Express, Vol 4, Iss 2, p 025005 (2023)
Spatial confinement is important in advanced More Moore devices, such as nanowire transistors (NWTs), where the basic charge transport properties must be revised beyond the bulk crystal assumptions. This work presents a comprehensive and general over
Externí odkaz:
https://doaj.org/article/211921c38814462db11b7ceab04658e8
Autor:
Lado Filipovic, Siegfried Selberherr
Publikováno v:
Nanomaterials, Vol 12, Iss 20, p 3651 (2022)
During the last few decades, the microelectronics industry has actively been investigating the potential for the functional integration of semiconductor-based devices beyond digital logic and memory, which includes RF and analog circuits, biochips, a
Externí odkaz:
https://doaj.org/article/fff1f03420e54a98b32200cb7aa52683