Zobrazeno 1 - 10
of 112
pro vyhledávání: '"Siegfried Karg"'
Publikováno v:
Frontiers in Neuroscience, Vol 18 (2024)
Externí odkaz:
https://doaj.org/article/5116b33b56fd49f3b71a0ddd42ba24ff
Autor:
Olivier Maher, Roy Bernini, Nele Harnack, Bernd Gotsmann, Marilyne Sousa, Valeria Bragaglia, Siegfried Karg
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-15 (2024)
Abstract With remarkable electrical and optical switching properties induced at low power and near room temperature (68 °C), vanadium dioxide (VO2) has sparked rising interest in unconventional computing among the phase-change materials research com
Externí odkaz:
https://doaj.org/article/2446e7a23d2e4a4dbbf06c4572eb28ae
Autor:
Olivier Maher, Manuel Jiménez, Corentin Delacour, Nele Harnack, Juan Núñez, María J. Avedillo, Bernabé Linares-Barranco, Aida Todri-Sanial, Giacomo Indiveri, Siegfried Karg
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-11 (2024)
Abstract Phase-encoded oscillating neural networks offer compelling advantages over metal-oxide-semiconductor-based technology for tackling complex optimization problems, with promising potential for ultralow power consumption and exceptionally rapid
Externí odkaz:
https://doaj.org/article/169afee7495440e5ae857cc1e7b1ef81
Autor:
Stefania Carapezzi, Corentin Delacour, Andrew Plews, Ahmed Nejim, Siegfried Karg, Aida Todri-Sanial
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-9 (2022)
Abstract Volatile memristors are versatile devices whose operating mechanism is based on an abrupt and volatile change of resistivity. This switching between high and low resistance states is at the base of cutting edge technological implementations
Externí odkaz:
https://doaj.org/article/33c9c9b565374aada6968741766d3145
Autor:
Juan Núñez, María J. Avedillo, Manuel Jiménez, José M. Quintana, Aida Todri-Sanial, Elisabetta Corti, Siegfried Karg, Bernabé Linares-Barranco
Publikováno v:
Frontiers in Neuroscience, Vol 15 (2021)
Nano-oscillators based on phase-transition materials are being explored for the implementation of different non-conventional computing paradigms. In particular, vanadium dioxide (VO2) devices are used to design autonomous non-linear oscillators from
Externí odkaz:
https://doaj.org/article/b509ef4d61bb492884faff526c296f5b
Autor:
Elisabetta Corti, Joaquin Antonio Cornejo Jimenez, Kham M. Niang, John Robertson, Kirsten E. Moselund, Bernd Gotsmann, Adrian M. Ionescu, Siegfried Karg
Publikováno v:
Frontiers in Neuroscience, Vol 15 (2021)
In this work we present an in-memory computing platform based on coupled VO2 oscillators fabricated in a crossbar configuration on silicon. Compared to existing platforms, the crossbar configuration promises significant improvements in terms of area
Externí odkaz:
https://doaj.org/article/a06c4f3d0a1b4a269e97432bb1b6d0be
Autor:
Carlos Navarro, Santiago Navarro, Carlos Marquez, Luca Donetti, Carlos Sampedro, Siegfried Karg, H. Riel, Francisco Gamiz
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 884-892 (2018)
2D numerical TCAD simulations are used to infer the behavior of III-V capacitor-less dynamic RAM (DRAM) cells. In particular, indium gallium arsenide on insulator technology is selected to verify the viability of III-V meta-stable-dip RAM cells. The
Externí odkaz:
https://doaj.org/article/13bfadcca71346c3ba8db0b0f683c1b6
Autor:
Davide Cutaia, Kirsten E. Moselund, Mattias Borg, Heinz Schmid, Lynne Gignac, Chris M. Breslin, Siegfried Karg, Emanuele Uccelli, Heike Riel
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 3, Pp 176-183 (2015)
In this paper, we introduce p-channel InAs-Si tunnel field-effect transistors (TFETs) fabricated using selective epitaxy in nanotube templates. We demonstrate the versatility of this approach, which enables III-V nanowire integration on Si substrates
Externí odkaz:
https://doaj.org/article/a1b08e3ce7e24b2696723827b13cd2f9
Publikováno v:
MRS Communications. 12:427-433
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::679d60e55f000d3aeef27a192fe5cf07
https://doi.org/10.1557/s43579-022-00196-3
https://doi.org/10.1557/s43579-022-00196-3
Autor:
Bernd Gotsmann, Elisabetta Corti, Siegfried Karg, Suman Datta, Kirsten E. Moselund, John Robertson, Kham M. Niang, A. Khanna
Publikováno v:
IEEE Electron Device Letters
Oscillatory neural networks based on insulator to metal transition of VO2 switches are implemented for image recognition. The VO2 oscillators are fabricated on silicon in a CMOS compatible process. A fully-connected network of coupled oscillators is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ce124a18a29b7a299f06ebfb0407d7cd
https://doi.org/10.1109/led.2020.2972006
https://doi.org/10.1109/led.2020.2972006