Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Sidi Fan"'
Autor:
Yonghong Zeng, Fanxu Meng, Sidi Fan, Pengfei Wang, Cuiyun Kou, Mingyi Sun, Haiguo Hu, Rui Cao, Swelm Wageh, Omar A. Al-Hartomy, Abul Kalam, Bowen Du, Wenchao Ding, Songrui Wei, Zhinan Guo, Qiuliang Wang, Han Zhang
Publikováno v:
Journal of Materiomics, Vol 9, Iss 6, Pp 1039-1047 (2023)
Van der Waals (vdW) heterojunctions, with their unique electronic and optoelectronic properties, have become promising candidates for photodetector applications. Amplifying the contribution of the depletion region in vdW heterojunction, which would e
Externí odkaz:
https://doaj.org/article/f5f0d0d192964627af877a0f61ea1099
Autor:
Rui Cao, Sidi Fan, Peng Yin, Chunyang Ma, Yonghong Zeng, Huide Wang, Karim Khan, Swelm Wageh, Ahmed A. Al-Ghamd, Ayesha Khan Tareen, Abdullah G. Al-Sehemi, Zhe Shi, Jing Xiao, Han Zhang
Publikováno v:
Nanomaterials, Vol 12, Iss 13, p 2260 (2022)
Since atomically thin two-dimensional (2D) graphene was successfully synthesized in 2004, it has garnered considerable interest due to its advanced properties. However, the weak optical absorption and zero bandgap strictly limit its further developme
Externí odkaz:
https://doaj.org/article/4f53d760eb0147ecb961ac7bd0a6f663
Publikováno v:
Advanced Science, Vol 7, Iss 3, Pp n/a-n/a (2020)
Abstract 2D van der Waals layered heterostructures allow for a variety of energy band offsets, which help in developing valuable multifunctional devices. However, p–n diodes, which are typical and versatile, are still limited by the material choice
Externí odkaz:
https://doaj.org/article/a3ab66cc73734263925bedc670526655
Publikováno v:
Journal of Materials Chemistry C; 5/28/2024, Vol. 12 Issue 20, p7338-7350, 13p
Autor:
Huide Wang, Yonghong Zeng, FanXu Meng, Rui Cao, Yi Liu, Zhinan Guo, Tingting Wang, Haiguo Hu, Sidi Fan, Yatao Yang, S. Wageh, Omar A. Al-Hartomy, Abul Kalam, Yonghong Shao, Yu-Jia Zeng, Dianyuan Fan, Han Zhang
Publikováno v:
Nano Research.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d75aefdb2fa58c9f50c41358ca65f79
https://doi.org/10.1007/s12274-023-5611-4
https://doi.org/10.1007/s12274-023-5611-4
Publikováno v:
Science China Materials. 64:2359-2387
Quantum tunneling with band-structure engineering has been feasibly developed for many applications in electrical, optoelectrical, and magnetic devices. It relies on layer-by-layer design and fabrication, which is an interdisciplinary research field
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a0cb6e56eb4fc11411ba743dd81e759
https://doi.org/10.1007/s40843-021-1685-y
https://doi.org/10.1007/s40843-021-1685-y
Autor:
Zhinan Guo, Yonghong Zeng, Fanxu Meng, Hengze Qu, Shengli Zhang, Shipeng Hu, Sidi Fan, Haibo Zeng, Rui Cao, Paras N. Prasad, Dianyuan Fan, Han Zhang
Publikováno v:
eLight. 2
Neutron-transmutation doping (NTD) has been demonstrated for the first time in this work for substitutional introduction of tin (Sn) shallow donors into two-dimensional (2D) layered indium selenide (InSe) to manipulate electron transfer and charge ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20783cb2866f78e25f86860c31f993f7
https://doi.org/10.1186/s43593-022-00017-z
https://doi.org/10.1186/s43593-022-00017-z
Autor:
Won Tae Kang, Min Ji Lee, Thanh Luan Phan, Van Tu Vu, Quoc An Vu, Linfeng Sun, Thi Suong Le, Sidi Fan, Hyun Yong Song, Woo Jong Yu, Dinh Loc Duong, Tuan Khanh Chau, Young Hee Lee
Publikováno v:
Nano Research. 13:3033-3040
The interface between oxide/oxide layers shows an inhomogeneous charge transport behavior, which reveals a high conductivity owing to interface-doped. One typical example is the hetero-interface between ZnO film and other wide band gap oxides (e.g.,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::300d3f9c480169cd7350f78b5c5b94e0
https://doi.org/10.1007/s12274-020-2968-5
https://doi.org/10.1007/s12274-020-2968-5
Autor:
Zhongquan Xu, Yonghong Zeng, Fanxu Meng, Shan Gao, Sidi Fan, Yi Liu, Yule Zhang, Swelm Wageh, Ahmed A. Al‐Ghamdi, Jing Xiao, Zhinan Guo, Han Zhang
Publikováno v:
Advanced Materials Interfaces. 9:2270149
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ef8b99c7e6eef453be8ee552c630cf0
https://doi.org/10.1002/admi.202270149
https://doi.org/10.1002/admi.202270149
Autor:
Sidi Fan, Young-Min Kim, Quoc An Vu, Gyeongtak Han, Woo Jong Yu, Young Hee Lee, Sanghyub Lee, Thanh Luan Phan
Publikováno v:
ACS Nano. 13:8193-8201
Vertically stacked two-dimensional van der Waals (vdW) heterostructures, used to obtain homogeneity and band steepness at interfaces, exhibit promising performance for band-to-band tunneling (BTBT) devices. Esaki tunnel diodes based on vdW heterostru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::055cad5d5595b15eb917b4ec45c6f6d0
https://doi.org/10.1021/acsnano.9b03342
https://doi.org/10.1021/acsnano.9b03342