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Autor:
Kienle, Diego, Cerda, Jorge I., Bevan, Kirk H., Liang, Gengchiau, Siddiqui, Lutfe, Ghosh, Avik W.
In this second paper, we develop transferable semi-empirical parameters for the technologically important material, silicon, using Extended Huckel Theory (EHT) to calculate its electronic structure. The EHT-parameters areoptimized to experimental tar
Externí odkaz:
http://arxiv.org/abs/cond-mat/0603393
