Zobrazeno 1 - 10
of 49
pro vyhledávání: '"Siddharth Potbhare"'
Publikováno v:
IEEE Transactions on Nuclear Science. 59:3258-3264
In 2011, after many years of research and development SiC power MOSFETs became available in the commercial marketplace. This paper presents the results of Co60 total ionizing dose (TID) effects for the new high power-high current 24 A SiC devices irr
Publikováno v:
Materials Science Forum. :449-452
We present transition layer electron mobility versus field curves for several 4H-SiC/SiO2 structures, simulated by a newly developed Monte Carlo simulator that uses density of states calculated by density functional theory (DFT). Our calculations sho
Autor:
Pamela Abshire, Marc Dandin, Peter Micah Sandvik, Stanislav I. Soloviev, Siddharth Potbhare, Alexey Vert, Neil Goldsman, Akin Akturk
Publikováno v:
Materials Science Forum. :1199-1202
We report measurements and modeling of silicon carbide (SiC) based ultraviolet photodetectors for the detection of light in the mid-to-short ultraviolet range where SiC’s absorption coefficients are high and the corresponding penetration depths are
Publikováno v:
Materials Science Forum. :457-460
We compare the effect of hydrogen, nitrogen, and phosphorous passivation on total near interface trap density and mobility of 4H(0001)-SiC/SiO2 structure. The results show that nitrogen and phosphorous passivation decrease total near interface trap d
Publikováno v:
ECS Transactions. 41:177-181
Silicon Carbide (SiC) based electronics are extremely promising for use in power systems as a result of their large band-gap and ability to grow a gate oxide. To facilitate the development of SiC based circuits, we need to develop new design tools th
Publikováno v:
ECS Transactions. 41:31-35
This paper demonstrates a a system capable of harvesting radio-frequency energy from the environment, rectifying this energy, boosting the resulting voltage across a load and using this rectified signal to charge a battery and a super-capacitor hybri
Autor:
Ralph W. Young, Akin Akturk, Marty Peckerar, Jason Hamlet, Siddharth Potbhare, Neil Goldsman, K. Eng, Thomas M. Gurrieri, Malcolm S. Carroll, E. Longoria
Publikováno v:
Microelectronic Engineering. 87:2518-2524
Compact modeling of MOSFETs from a [email protected] SOI technology node operating at 4K is presented. The Verilog-A language is used to modify device equations for BSIM models and more accurately reproduce measured DC behavior, which is not possible
Autor:
Akin Akturk, M. Holloway, Bo Li, Martin Peckerar, Neil Goldsman, David J. Gundlach, Kin P. Cheung, Siddharth Potbhare
Publikováno v:
IEEE Transactions on Electron Devices. 57:1334-1342
We have developed compact and physics-based distributed numerical models for cryogenic bulk MOSFET operation down to 20 K to advance simulation and first-pass design of device and circuit operation at low temperatures. To achieve this, we measured an
Publikováno v:
Materials Science Forum. :1163-1166
We present detailed mixed-mode simulations of a DC-DC converter based on 4H-SiC DMOSFETs. The mixed-mode modeling enables the use of complex physics based models for the interface trap occupation and surface mobility that are typical for 4H-SiC devic
Autor:
Sarit Dhar, Aivars J. Lelis, Akin Akturk, Siddharth Potbhare, Anant K. Agarwal, Neil Goldsman
Publikováno v:
Materials Science Forum. :975-978
We present physics based models for the occupation of interface traps and the mobility of the transition layer found in 4H-SiC MOSFETs and extract values for the same using combined numerical simulation and experimental characterization. The Si-C-O t