Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Siddharta Omar"'
Autor:
Mallikarjuna Gurram, B. J. van Wees, Siddharta Omar, T. Taniguchi, Marcos H. D. Guimarães, Kenji Watanabe
Publikováno v:
Physical Review Applied, 14(6):064053. AMER PHYSICAL SOC
University of Groningen
University of Groningen
The current generation of spintronic devices, which use electron-spin relies on linear operations for spin-injection, transport and detection processes. The existence of nonlinearity in a spintronic device is indispensable for spin-based complex sign
Autor:
B. J. van Wees, Siddharta Omar
Publikováno v:
Physical Review B
Physical Review. B: Condensed Matter and Materials Physics, 95(8):081404. AMER PHYSICAL SOC
Physical Review. B: Condensed Matter and Materials Physics, 95(8):081404. AMER PHYSICAL SOC
We report the first measurements of spin injection in to graphene through a 20 nm thick tungsten disulphide (WS$_2$) layer, along with a modified spin relaxation time ({\tau}s) in graphene in the WS$_2$ environment, via spin-valve and Hanle spin-prec
Autor:
Péter Makk, Siddharta Omar, Mallikarjuna Gurram, van Bart Wees, Christian Schoenenberger, Simon Zihlmann
Publikováno v:
Physical Review. B: Condensed Matter and Materials Physics, 93(11):115441. AMER PHYSICAL SOC
We study fully hexagonal boron nitride (hBN)-encapsulated graphene spin valve devices at room temperature. The device consists of a graphene channel encapsulated between two crystalline hBN flakes; thick-hBN flake as a bottom gate dielectric substrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::614bbd8c84f5ca49395bf16d97ce01af
http://arxiv.org/abs/1603.04357
http://arxiv.org/abs/1603.04357
Autor:
Ivan J. Vera-Marun, van Bart Wees, Alexey Kaverzin, E. H. Huisman, Bernard Feringa, Xiaoyan Zhang, Mallikarjuna Gurram, Siddharta Omar
Publikováno v:
Physical Review B
Physical Review. B: Condensed Matter and Materials Physics, 92(11):115442. AMER PHYSICAL SOC
Physical Review. B: Condensed Matter and Materials Physics, 92(11):115442. AMER PHYSICAL SOC
In graphene spintronics, interaction of localized magnetic moments with the electron spins paves a new way to explore the underlying spin-relaxation mechanism. A self-assembled layer of organic cobalt porphyrin (CoPP) molecules on graphene provides a