Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Sicong Yuan"'
Autor:
Yu Sun, Walter Schwarzenbach, Sicong Yuan, Zhuo Chen, Yanbin Yang, Bich-Yen Nguyen, Dawei Gao, Rui Zhang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 210-215 (2023)
The impact of channel thickness on the negative-bias temperature instability (NBTI) behaviors has been studied for the Germanium-on-Insulator (Ge-OI) pMOSFETs. It is found that the permanent and recoverable defects are generated simultaneously during
Externí odkaz:
https://doaj.org/article/dcd0babd66df4030b90ce2e0dc1d4d1e
Publikováno v:
Production and Manufacturing Research: An Open Access Journal, Vol 7, Iss 1, Pp 109-124 (2019)
In order to solve the problems associated with the organization of the dynamic facility layout in a manufacturing workshop, utilizing a chaotic generic algorithm with improved Tent mapping is proposed as a solution. The tent map is used to generate t
Externí odkaz:
https://doaj.org/article/47eb840a73c1424da563a8d0aa201388
Publikováno v:
2022 IEEE 2nd International Conference on Electronic Technology, Communication and Information (ICETCI).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c799f751e13995d64979144ece132006
https://doi.org/10.1109/icetci55101.2022.9832240
https://doi.org/10.1109/icetci55101.2022.9832240
Publikováno v:
IEEE Transactions on Electron Devices. 67:2516-2521
The impact of electrical stress on the defect generation behaviors in thin GeO2/n-Ge gate stacks has been investigated through the measurement of the time-dependent dielectric breakdown (TDDB) and the stress-induced leakage current (SILC) characteris
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff7809f31cd5693c61c5c3b7e89192df
https://doi.org/10.1109/ted.2020.2989247
https://doi.org/10.1109/ted.2020.2989247
Publikováno v:
IEEE Transactions on Electron Devices. 66:5284-5288
The thermal stability has been investigated for the NiGe–n-Ge junctions with and without the dopant segregation (DS). It is found that the B DS sufficiently improves the thermal tolerance of the NiGe–n-Ge junctions, and the DS NiGe–n-Ge junctio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6925abc7feba5320f065346d622dd40
https://doi.org/10.1109/ted.2019.2950914
https://doi.org/10.1109/ted.2019.2950914
Publikováno v:
In Journal of Systems Engineering and Electronics 2008 19(3):628-635
Publikováno v:
2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
The carrier scattering mechanisms are quantitatively examined for UTB Ge-OI pMOSFETs. It is confirmed that the μ fluctuation is dominant for Ge-OI pMOSFETs thinner than ~5 nm and the μ ph /μ sr are dominant for thicker channels of >~8 nm.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe5f2b3cbcfaf47e855afd53eb990aa6
https://doi.org/10.1109/s3s46989.2019.9320722
https://doi.org/10.1109/s3s46989.2019.9320722
Publikováno v:
Journal of Semiconductors. 42:023101
The performance enhancement of conventional Si MOSFETs through device scaling is becoming increasingly difficult. The application of high mobility channel materials is one of the most promising solutions to overcome the bottleneck. The Ge and GeSn ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93b6e02aa179e2c09c5c6078085ecd30
https://doi.org/10.1088/1674-4926/42/2/023101
https://doi.org/10.1088/1674-4926/42/2/023101
Publikováno v:
2016 35th Chinese Control Conference (CCC).
In reverse technology, the key step in front of importing model is the data preprocessing. The purpose of de-nosing is to remove the needless curved surface on the three-dimension (3-D) model by scanning. The stereo lithography (STL) data obtained by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::989c0bf74decfcd311c34b102d10761c
https://doi.org/10.1109/chicc.2016.7554145
https://doi.org/10.1109/chicc.2016.7554145
Publikováno v:
Proceedings of the 2016 3rd International Conference on Materials Engineering, Manufacturing Technology and Control.
Aiming at the virtual movement emulation's design scheme of the jumbolter , the jumbolter's digital model is built by the 3D modeling software PRO/E5.0,the research combined the jumbolter with virtual reality technology. Jumbolter simulation virtual
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2550f2af8cd2806a9d51238b40069cb1
https://doi.org/10.2991/icmemtc-16.2016.63
https://doi.org/10.2991/icmemtc-16.2016.63