Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Siang-Sheng Gu"'
Autor:
Kuan-Ting Chen, Siang-Sheng Gu, Zheng-Ying Wang, Chun-Yu Liao, Yu-Chen Chou, Ruo-Chun Hong, Shih-Yao Chen, Hong-Yu Chen, Gao-Yu Siang, Chieh Lo, Pin-Guang Chen, M.-H. Liao, Kai-Shin Li, Shu-Tong Chang, Min-Hung Lee
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 900-904 (2018)
Ferroelectric-Hf1-xZrxO2 FETs on silicon on insulator (SOI) are modeled and demonstrated with improvement on subthreshold swing (SS) and hysteresis (VT-shift), which is based on the capacitance matching concept. The minimum reverse SS = 45 mV/dec and
Externí odkaz:
https://doaj.org/article/542e8768d7ce43eeb099863d27bfde87
Autor:
H.-Y. Chen, C.-Y. Liao, Ming-Han Liao, Shu-Tong Chang, Zheng-Ying Wang, Yu-Chen Chou, Ruo-Chun Hong, Min-Hung Lee, C. Lo, Pin-Guang Chen, Siang-Sheng Gu, Shih-Yao Chen, Kai-Shin Li, Kuan-Ting Chen, Gao-Yu Siang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 900-904 (2018)
Ferroelectric-Hf1-xZrxO2 FETs on silicon on insulator (SOI) are modeled and demonstrated with improvement on subthreshold swing (SS) and hysteresis (VT-shift), which is based on the capacitance matching concept. The minimum reverse SS = 45 mV/dec and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8003e310c78d3208cac7654f7280a3f5
https://ieeexplore.ieee.org/document/8425629/
https://ieeexplore.ieee.org/document/8425629/
Autor:
Kai-Chi Chuang, Zheng Ying Wang, Hao Tung Chung, Yi-Shao Li, Wei-Shuo Li, Kai Shin Li, Chan Yu Liao, Siang Sheng Gu, He Xin Zhang, Jun-Dao Luo, Huang-Chung Cheng, Yun Tien Yeh, Min-Hung Lee
Publikováno v:
Japanese Journal of Applied Physics. 58:SDDE07
Modulating the water pulse time during thermal atomic layer deposition is an effective approach to enhancing the ferroelectric properties of undoped HfO2 thin films. Through grazing incidence X-ray diffraction (GI-XRD), it was observed that a shorter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94f4140314f2a41804103ab0d8ba77a5
https://doi.org/10.7567/1347-4065/ab0ded
https://doi.org/10.7567/1347-4065/ab0ded
Autor:
Jun-Dao Luo, He-Xin Zhang, Zheng-Ying Wang, Siang-Sheng Gu, Yun-Tien Yeh, Hao-Tung Chung, Kai-Chi Chuang, Chan-Yu Liao, Wei-Shuo Li, Yi-Shao Li, Kai-Shin Li, Min-Hung Lee, Huang-Chung Cheng
Publikováno v:
Japanese Journal of Applied Physics; 6/2/2019, Vol. 58 Issue SD, p1-1, 1p