Crown ether decorated silicon photonics for safeguarding against lead poisoning.

Autor: Ranno L; Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Tan YZ; Fingate Technologies Pte Ltd, 8 Cleantech Loop #06-65, 637145, Singapore, Singapore., Ong CS; Fingate Technologies Pte Ltd, 8 Cleantech Loop #06-65, 637145, Singapore, Singapore., Guo X; School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Singapore., Koo KN; Vulcan Photonics SDN. BHD. D-11-08, Menara Suezcap 1 KL Gateway, No. 2, Jalan Kerinchi, Kampung Kerinchi, 59200, Kuala Lumpur, Malaysia., Li X; School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Singapore., Wang W; School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Singapore., Serna S; Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Liu C; Temasek Laboratories, Nanyang Technological University, 50 Nanyang Avenue, 637553, Singapore, Singapore., Rusli; School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Singapore., Littlejohns CG; Optoelectronics Research Centre, University of Southampton, Southampton, SO17 1BJ, UK., Reed GT; Optoelectronics Research Centre, University of Southampton, Southampton, SO17 1BJ, UK., Hu J; Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Wang H; School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Singapore., Sia JXB; Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA. jiaxubrian.sia@ntu.edu.sg.; School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Singapore. jiaxubrian.sia@ntu.edu.sg.

Publikováno v: Nature communications [Nat Commun] 2024 May 14; Vol. 15 (1), pp. 3820. Date of Electronic Publication: 2024 May 14.

Modal gain characteristics of a two-section InGaAs/GaAs double quantum well passively mode-locked laser with asymmetric waveguide.

Autor: Qiao Z; Hainan Province Key Laboratory of Laser Technology and Photoelectric Functional Materials, School of Physics and Electronic Engineering, Hainan Normal University, No. 99 Longkun Road, Haikou, 571158, Hainan, China. qzhl060910@hainnu.edu.cn., Li X; Temasek Laboratories@NTU (TL@NTU), Nanyang Technological University, 50 Nanyang Drive, Singapore, 637553, Singapore., Sia JXB; School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore., Wang W; School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore., Wang H; Temasek Laboratories@NTU (TL@NTU), Nanyang Technological University, 50 Nanyang Drive, Singapore, 637553, Singapore. ewanghong@ntu.edu.sg.; School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore. ewanghong@ntu.edu.sg., Li Z; Hainan Province Key Laboratory of Laser Technology and Photoelectric Functional Materials, School of Physics and Electronic Engineering, Hainan Normal University, No. 99 Longkun Road, Haikou, 571158, Hainan, China., Zhao Z; Hainan Province Key Laboratory of Laser Technology and Photoelectric Functional Materials, School of Physics and Electronic Engineering, Hainan Normal University, No. 99 Longkun Road, Haikou, 571158, Hainan, China., Li L; Hainan Province Key Laboratory of Laser Technology and Photoelectric Functional Materials, School of Physics and Electronic Engineering, Hainan Normal University, No. 99 Longkun Road, Haikou, 571158, Hainan, China., Gao X; National Key Laboratory On High Power Semiconductor Lasers, Changchun University of Science and Technology, No. 7186 Weixing Road, Changchun, 130022, Jilin, China., Bo B; National Key Laboratory On High Power Semiconductor Lasers, Changchun University of Science and Technology, No. 7186 Weixing Road, Changchun, 130022, Jilin, China., Qu Y; Hainan Province Key Laboratory of Laser Technology and Photoelectric Functional Materials, School of Physics and Electronic Engineering, Hainan Normal University, No. 99 Longkun Road, Haikou, 571158, Hainan, China., Liu G; Hainan Province Key Laboratory of Laser Technology and Photoelectric Functional Materials, School of Physics and Electronic Engineering, Hainan Normal University, No. 99 Longkun Road, Haikou, 571158, Hainan, China., Liu C; Temasek Laboratories@NTU (TL@NTU), Nanyang Technological University, 50 Nanyang Drive, Singapore, 637553, Singapore. liucy@ntu.edu.sg.

Publikováno v: Scientific reports [Sci Rep] 2022 Mar 23; Vol. 12 (1), pp. 5010. Date of Electronic Publication: 2022 Mar 23.

Compact silicon photonic hybrid ring external cavity (SHREC)/InGaSb-AlGaAsSb wavelength-tunable laser diode operating from 1881-1947 nm.

Autor: Sia JXB, Wang W, Qiao Z, Li X, Guo X, Zhou J, Littlejohns CG, Zhang Z, Liu C, Reed GT, Wang H

Publikováno v: Optics express [Opt Express] 2020 Feb 17; Vol. 28 (4), pp. 5134-5146.

Integrated Pockels laser.

Autor: Li, Mingxiao, Chang, Lin, Wu, Lue, Staffa, Jeremy, Ling, Jingwei, Javid, Usman A., Xue, Shixin, He, Yang, Lopez-rios, Raymond, Morin, Theodore J., Wang, Heming, Shen, Boqiang, Zeng, Siwei, Zhu, Lin, Vahala, Kerry J., Bowers, John E., Lin, Qiang

Publikováno v: Nature Communications; 9/12/2022, Vol. 13 Issue 1, p1-10, 10p