Zobrazeno 1 - 10
of 13 616
pro vyhledávání: '"SiGe"'
Autor:
Jyi-Tsong Lin, Chia-Yo Kuo
Publikováno v:
Discover Nano, Vol 19, Iss 1, Pp 1-16 (2024)
Abstract Nanosheet transistors are poised to become the preferred choice for the next generation of smaller-sized devices in the future. To address the future demand for high-performance and low-power computing applications, this study proposes a nan
Externí odkaz:
https://doaj.org/article/ca4285b817004358a4840b5846b41cd2
Optimizing a modulator driver for linear and high-speed operation, while simultaneously achieving a high output voltage swing is very challenging. This paper investigates the design of a highlylinear, high-bandwidth yet power-efficient Mach-Zehnder m
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A91930
https://tud.qucosa.de/api/qucosa%3A91930/attachment/ATT-0/
https://tud.qucosa.de/api/qucosa%3A91930/attachment/ATT-0/
Autor:
Muhammad Taha Sultan, Ionel Stavarache, Andrei Manolescu, Unnar Bjarni Arnalds, Valentin Serban Teodorescu, Halldor Gudfinnur Svavarsson, Snorri Ingvarsson, Magdalena Lidia Ciurea
Publikováno v:
Advanced Photonics Research, Vol 5, Iss 8, Pp n/a-n/a (2024)
SiGe‐SiO2‐based structures present high interest for their high photosensitivity from visible to short‐wavelength infrared. Herein, two postdeposition annealing procedures, that is, rapid thermal annealing (RTA) and rapid‐like furnace anneali
Externí odkaz:
https://doaj.org/article/3681201d6fd14a6ca593676e58d7b461
Autor:
K. Aishwarya, B. Lakshmi
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-13 (2024)
Abstract Semiconductor devices used in radiation environment are more prone to degradation in device performance. Junctionless Tunnel Field Effect Transistor (JLTFET) is one of the most potential candidates which overcomes the short channel effects a
Externí odkaz:
https://doaj.org/article/23cfccf919f64907aa44e6d8b358ebc6
Autor:
Kaoru Toko, Shintaro Maeda, Takamitsu Ishiyama, Koki Nozawa, Masayuki Murata, Takashi Suemasu
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 7, Pp n/a-n/a (2024)
Abstract Flexible thermoelectric generators are leading candidates for next‐generation energy‐harvesting devices. Although SiGe, an environmentally‐friendly semiconductor, is the most reliable and widely tested thermoelectric material, it is di
Externí odkaz:
https://doaj.org/article/ff0609965de34ecbbb4c07f9f7681742
Publikováno v:
IEEE Access, Vol 12, Pp 138180-138191 (2024)
This paper presents a BiCMOS low-noise amplifier (LNA) operating at G-band (140 to 220 GHz) that is robust against harsh operation conditions, namely large temperature variations and radiation exposure. A SiGe technology (IHP’s 0.13- $\mathrm {\mu
Externí odkaz:
https://doaj.org/article/7112626058d8425dba913919428506a8
Autor:
Sebastien Fregonese, Thomas Zimmer
Publikováno v:
IEEE Journal of Microwaves, Vol 4, Iss 3, Pp 381-388 (2024)
This work focuses on a novel methodology to establish on-wafer calibration standards for the 16-Term Error Calibration Technique. It combines TRL-calibrated data with EM simulation to precisely generate S-parameters of standards. Applied to the advan
Externí odkaz:
https://doaj.org/article/18f2b9c682a545bdb8be2cc639d84118
Publikováno v:
IEEE Access, Vol 12, Pp 78572-78588 (2024)
With automotive radar and 5G/6G communications, mass-market applications for millimeter-wave circuits in silicon technologies have been identified or established in recent years. For high-volume, millimeter-wave integrated circuits, operating roughly
Externí odkaz:
https://doaj.org/article/b79a76d139c845c78c3ea5bd6981df00
Autor:
Talamas Simola Enrico, Ortolani Michele, Di Gaspare Luciana, Capellini Giovanni, De Seta Monica, Virgilio Michele
Publikováno v:
Nanophotonics, Vol 13, Iss 10, Pp 1781-1791 (2024)
We present a theoretical investigation of guided second harmonic generation at THz frequencies in SiGe waveguides embedding n-type Ge/SiGe asymmetric coupled quantum wells to engineer a giant second order nonlinear susceptibility. A characteristic of
Externí odkaz:
https://doaj.org/article/9a99e09ac45e4afcb01f8675bf07f7b5
Autor:
U. R. Pfeiffer, A. Kutaish
Publikováno v:
IEEE Open Journal of the Solid-State Circuits Society, Vol 4, Pp 1-11 (2024)
The terahertz (THz) frequency range is widely considered the most challenging and underdeveloped frequency range due to the lack of technologies to effectively bridge the transition region between microwaves (below 100 GHz) and optics (above 10 000 G
Externí odkaz:
https://doaj.org/article/57b89ffbd592458886fd8c737f57b51f