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Ion implantation in silicon carbide (SiC) induces defects during the process. Implantation free processing can eliminate these problems. The junction termination extension (JTE) can also be formed without ion implantation in SiC bipolar junction tran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1933ee5d87b26bb2ef98e467fe8ffa6c
http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-181583
http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-181583
