Nano-precipitation in hot-pressed silicon carbide

Autor: Jonghe, Lutgard C. De

Publikováno v: Jonghe, Lutgard C. De. (2000). Nano-precipitation in hot-pressed silicon carbide. Journal of Materials Science, 36(22). Lawrence Berkeley National Laboratory: Lawrence Berkeley National Laboratory. Retrieved from: http://www.escholarship.org/uc/item/21b7w5b3

Heat treatments at 1300 degrees C, 1400 degrees C, 1500 degrees C, and 1600 degrees C in Ar were found to produce nanoscale precipitates in hot-pressed silicon carbide containing aluminum, boron, and carbon sintering additives (ABC-SiC). The precipit

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http://www.escholarship.org/uc/item/21b7w5b3