Zobrazeno 1 - 10
of 3 382
pro vyhledávání: '"SiC MOSFET"'
Autor:
Li, Qian
This dissertation introduces a hierarchical optimization framework for power converter-based energy management systems, with a primary focus on weight minimization. Emphasizing modularity and scalability, the research systematically tackles the chall
Externí odkaz:
https://hdl.handle.net/10919/119388
Akademický článek
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Autor:
Anliang Hu, Jurgen Biela
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 5, Pp 1684-1696 (2024)
Fast and accurate switching loss models that can be used for different devices are crucial for optimization-based converter design. This paper proposes a novel data sheet based, fully analytical loss model for a SiC MOSFET and Schottky diode half-bri
Externí odkaz:
https://doaj.org/article/59314563771b46deb76e7acc12ad4698
Autor:
Ran Yao, Zheyan Zhu, Hui Li, Wei Lai, Xianping Chen, Francesco Iannuzzo, Renkuan Liu, Xiaorong Luo
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 5, Pp 1629-1640 (2024)
The conventional TO-247-3 packages with single-sided cooling limit the thermal and electrical performances of discrete SiC MOSFET devices. In this paper, a double-sided cooling press-pack (PP) packaging approach for the discrete SiC MOSFET device is
Externí odkaz:
https://doaj.org/article/c45fc28179dc47628cfc210a5cb34c92
Publikováno v:
CSEE Journal of Power and Energy Systems, Vol 10, Iss 4, Pp 1799-1807 (2024)
Compared to Si devices, the junction temperature of SiC devices is more critical due to the reliability concern introduced by immature packaging technology applied to new material. This paper proposes a practical SiC MOSFET junction temperature monit
Externí odkaz:
https://doaj.org/article/92a5e615a6e742c9ab2a29528746a92c
Autor:
Shin-Ichiro Hayashi, Keiji Wada
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 5, Pp 709-717 (2024)
This paper proposes a gate drive circuit with a condition monitoring function for detecting the gate oxide degradation in silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs). Trapped charges in the gate oxide can ca
Externí odkaz:
https://doaj.org/article/92b2b972cf7c4562a26e606ad6b3be03
Publikováno v:
IEEE Access, Vol 12, Pp 65278-65286 (2024)
In this paper, a solid state circuit breaker(SSCB) for a low voltage direct current (LVDC) system is presented. The LVDC distribution system such as a household distribution, require a DC input source, DC loads, and a DC circuit breaker. The major pr
Externí odkaz:
https://doaj.org/article/56d928aca9ed4a0cb2a07aa7e060523f
Publikováno v:
IEEE Access, Vol 12, Pp 40842-40855 (2024)
Silicon carbide three-level active neutral point clamped converters (SiC 3L-ANPC) have emerged as promising solutions for medium-voltage high-capacity applications. However, compared to traditional two-level converters, they exhibit a relatively high
Externí odkaz:
https://doaj.org/article/7e1315ef75f3412ca43fcfe95bfa28c5
Publikováno v:
IEEE Access, Vol 12, Pp 9138-9150 (2024)
This study proposes a novel method to compensate phase shift angle of dual active bridge (DAB) converters by considering the parasitic capacitance of SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). In general, the DAB converter bidi
Externí odkaz:
https://doaj.org/article/67663fe7a7334f6d9872911565b508bb
Publikováno v:
Yuanzineng kexue jishu, Vol 57, Iss 12, Pp 2254-2263 (2023)
The single event effect on SiC MOSFET was studied for space applications. 1 200 V SiC MOSFET from four manufactures was irradiated with heavy ions. The ions of carbon (C), germanium (Ge), tantalum (Ta), bismuth (Bi), and uranium (U) were used. The li
Externí odkaz:
https://doaj.org/article/8e7811f4cb05412791f6bd623e0ddd5e