Static and switching characteristics of 10 kV-class Silicon Carbide Transistors and Darlingtons

Autor: Asllani, Besar, Bevilacqua, Pascal, Morel, Hervé, Planson, Dominique, Phung, Luong Viet, Choucoutou, Beverley, Lagier, Thomas, Mermet-Guyennet, Michel

Publikováno v: Materials Science Forum
Materials Science Forum, Trans Tech Publications Inc., 2020, 1004, pp.923-932. ⟨10.4028/www.scientific.net/MSF.1004.923⟩

International audience; This paper reports the device design, fabrication and characterisation of 10 kV-class BJT. Manufactured devices have been packaged in single BJT, two paralleled BJTs and Darlington. The static and switching characteristics of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::a934d08bdfc2179e1cd3e343141a0e4a
https://hal.archives-ouvertes.fr/hal-02931290/file/ICSCRM2019_BJT_review.pdf