Zobrazeno 1 - 10
of 66
pro vyhledávání: '"Si-cap"'
Autor:
Zhuo Chen, Huilong Zhu, Guilei Wang, Qi Wang, Zhongrui Xiao, Yongkui Zhang, Jinbiao Liu, Shunshun Lu, Yong Du, Jiahan Yu, Wenjuan Xiong, Zhenzhen Kong, Anyan Du, Zijin Yan, Yantong Zheng
Publikováno v:
Nanomaterials, Vol 13, Iss 12, p 1867 (2023)
At sub-3 nm nodes, the scaling of lateral devices represented by a fin field-effect transistor (FinFET) and gate-all-around field effect transistors (GAAFET) faces increasing technical challenges. At the same time, the development of vertical devices
Externí odkaz:
https://doaj.org/article/94b5062252864711b56688868cb09bee
Autor:
Zhuo Chen, Huilong Zhu, Guilei Wang, Qi Wang, Zhongrui Xiao, Yongkui Zhang, Jinbiao Liu, Shunshun Lu, Yong Du, Jiahan Yu, Wenjuan Xiong, Zhenzhen Kong, Anyan Du, Zijin Yan, Yantong Zheng
Publikováno v:
Nanomaterials, Vol 13, Iss 11, p 1786 (2023)
Transistor scaling has become increasingly difficult in the dynamic random access memory (DRAM). However, vertical devices will be good candidates for 4F2 DRAM cell transistors (F = pitch/2). Most vertical devices are facing some technical challenges
Externí odkaz:
https://doaj.org/article/c4259ceaf8894f1db0a706cb9a310538
Autor:
Zheng, Zhuo Chen, Huilong Zhu, Guilei Wang, Qi Wang, Zhongrui Xiao, Yongkui Zhang, Jinbiao Liu, Shunshun Lu, Yong Du, Jiahan Yu, Wenjuan Xiong, Zhenzhen Kong, Anyan Du, Zijin Yan, Yantong
Publikováno v:
Nanomaterials; Volume 13; Issue 12; Pages: 1867
At sub-3 nm nodes, the scaling of lateral devices represented by a fin field-effect transistor (FinFET) and gate-all-around field effect transistors (GAAFET) faces increasing technical challenges. At the same time, the development of vertical devices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=multidiscipl::a001d065a7717d66d461b232e79cee49
Autor:
Zheng, Zhuo Chen, Huilong Zhu, Guilei Wang, Qi Wang, Zhongrui Xiao, Yongkui Zhang, Jinbiao Liu, Shunshun Lu, Yong Du, Jiahan Yu, Wenjuan Xiong, Zhenzhen Kong, Anyan Du, Zijin Yan, Yantong
Publikováno v:
Nanomaterials; Volume 13; Issue 11; Pages: 1786
Transistor scaling has become increasingly difficult in the dynamic random access memory (DRAM). However, vertical devices will be good candidates for 4F2 DRAM cell transistors (F = pitch/2). Most vertical devices are facing some technical challenges
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=multidiscipl::98ffc933e96ae4869981281b1ee159b1
Autor:
Qide Yao, Xueli Ma, Hanxiang Wang, Yanrong Wang, Guilei Wang, Jing Zhang, Wenkai Liu, Xiaolei Wang, Jiang Yan, Yongliang Li, Wenwu Wang
Publikováno v:
Nanomaterials, Vol 11, Iss 4, p 955 (2021)
The interface passivation of the HfO2/Si0.7Ge0.3 stack is systematically investigated based on low-temperature ozone oxidation and Si-cap methods. Compared with the Al2O3/Si0.7Ge0.3 stack, the dispersive feature and interface state density (Dit) of t
Externí odkaz:
https://doaj.org/article/f88ac2c5fa2d46e59d12b503a353eb2a
Akademický článek
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Akademický článek
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K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Publikováno v:
Royal Society Open Science, Vol 5, Iss 10 (2018)
The applications of magnesium (Mg) alloys as biodegradable orthopedic implants are mainly restricted due to their rapid degradation rate in the physiological environment. In this study, Si–CaP micro-arc oxidation (MAO) coatings were prepared on a M
Externí odkaz:
https://doaj.org/article/96265b4f56334debb41e543148e09506
Autor:
Jing Zhang, Qide Yao, Guilei Wang, Jiang Yan, Yanrong Wang, Hanxiang Wang, Yongliang Li, Xiaolei Wang, Wenwu Wang, Xueli Ma, Wenkai Liu
Publikováno v:
Nanomaterials, Vol 11, Iss 955, p 955 (2021)
Nanomaterials
Volume 11
Issue 4
Nanomaterials
Volume 11
Issue 4
The interface passivation of the HfO2/Si0.7Ge0.3 stack is systematically investigated based on low-temperature ozone oxidation and Si-cap methods. Compared with the Al2O3/Si0.7Ge0.3 stack, the dispersive feature and interface state density (Dit) of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::abe13aa72fd92e0006fc66730884d8c8
https://www.mdpi.com/2079-4991/11/4/955
https://www.mdpi.com/2079-4991/11/4/955
Autor:
Zurauskaite, Laura
Continuous scaling of transistor dimensions has been in the heart of semiconductorindustry for many years. Recently the scaling has been enabled by various performance boosters which resulted in increased processing complexity and cost, forcing the c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::fdab1392f353c7bc904661483dd79519
http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-302649
http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-302649
