Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Si-Xiang Zhao"'
Autor:
Zi-Han Tao, Hao-Dong Liu, Si-Xiang Zhao, Xue-Chun Li, Cai-Bin Liu, Yi-Wen Zhu, Chen Wang, Hai-Shan Zhou, Guang-Nan Luo
Publikováno v:
Nuclear Materials and Energy, Vol 40, Iss , Pp 101694- (2024)
Copper-based brazing filler materials are commonly employed in vacuum brazing techniques to achieve joining of plasma-facing components for ITER. In this work, gas-driven permeation (GDP) and thermal desorption spectroscopy (TDS) experiments have bee
Externí odkaz:
https://doaj.org/article/ccb2603725af40c2b8e0b8a5b903c9fd
Publikováno v:
Nuclear Materials and Energy, Vol 23, Iss , Pp - (2020)
The energy characteristics of the main deuterium (D) traps in CuCrZr alloy samples, which were previously annealed at temperatures of 773, 873, 973 and 1073 K and then exposed to D2 gas at a pressure of 2.5 × 104 Pa and a temperature of 723 K for 10
Externí odkaz:
https://doaj.org/article/c61d26057f5647bcb3577ecf2363b2dd
Autor:
Ning Gao, Jin Jin, Chao Liu, Pengfei Tai, Tielong Shen, Yanbin Sheng, Hongpeng Zhang, Wen-Hao He, Kongfang Wei, Hailong Chang, Xing Gao, Minghuan Cui, Bingsheng Li, Yu-Xuan Huang, Yabin Zhu, Peng Luo, Jin-Xin Peng, Zhiguang Wang, Xuesong Fang, Cunfeng Yao, Dong Wang, Yi Han, Si-Xiang Zhao, Lilong Pang, Limin Zhang, Li Zhang, Jianrong Sun
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 406:543-547
The lattice disorders induced by He-ion implantation in GaN epitaxial films to fluences of 2 × 1016, 5 × 1016 and 1 × 1017 cm−2 at room temperature (RT) have been investigated by a combination of Raman spectroscopy, high-resolution X-ray diffrac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1757cb6743dfef98b6020f4aed7a4108
https://doi.org/10.1016/j.nimb.2016.12.039
https://doi.org/10.1016/j.nimb.2016.12.039
Publikováno v:
Proceedings of the 3rd Annual International Conference on Advanced Material Engineering (AME 2017).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ef3259367365ef67217d44278f30a0f
https://doi.org/10.2991/ame-17.2017.3
https://doi.org/10.2991/ame-17.2017.3
Publikováno v:
Materials Science Forum. 686:641-645
The yttria-erbia multilayered coatings were prepared on 316L stainless steel substrates by bipolar pulse magnetron sputtering. Structures of these coatings were examined by X-ray diffraction and scanning electron microscopy. Bonding strength of these
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::baffe8a019f8c4655567c0cf68ba0351
https://doi.org/10.4028/www.scientific.net/msf.686.641
https://doi.org/10.4028/www.scientific.net/msf.686.641
Autor:
Lilong Pang, Kongfang Wei, Yabin Zhu, Yanbin Sheng, Jin Jin, Jianrong Sun, Xuesong Fang, Peng Luo, Zhiguang Wang, Ning Gao, Si-Xiang Zhao, Zhiwei Ma, Pengfei Tai, Hailong Chang, Dong Wang, Hongpeng Zhang, Wen-Hao He, Tianyu Deng, Jin-Xin Peng, Yu-Xuan Huang, Minghuan Cui, Xing Gao, Tielong Shen, Cunfeng Yao, Bingsheng Li, Yi Han, Chao Liu
Publikováno v:
Chinese Physics Letters. 34:012801
Radiation-induced defect annealing in He+ ion-implanted 4H-SiC via H+ ion irradiation is investigated by Raman spectroscopy. There are 4H-SiC wafers irradiated with 230 keV He+ ions with fluences ranging from 5.0x10(15) cm(-2) to 2.0 x 10(16) cm(-2)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0370ee76672efc7f5b46868811091898
https://doi.org/10.1088/0256-307x/34/1/012801
https://doi.org/10.1088/0256-307x/34/1/012801
Autor:
Yi Han, Bing-Sheng Li, Zhi-Guang Wang, Jin-Xin Peng, Jian-Rong Sun, Kong-Fang Wei, Cun-Feng Yao, Ning Gao, Xing Gao, Li-Long Pang, Ya-Bin Zhu, Tie-Long Shen, Hai-Long Chang, Ming-Huan Cui, Peng Luo, Yan-Bin Sheng, Hong-Peng Zhang, Xue-Song Fang, Si-Xiang Zhao, Jin Jin
Publikováno v:
Chinese Physics Letters; Jan2017, Vol. 34 Issue 1, p1-1, 1p