Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Si-Xiang Zhao"'
Autor:
Zi-Han Tao, Hao-Dong Liu, Si-Xiang Zhao, Xue-Chun Li, Cai-Bin Liu, Yi-Wen Zhu, Chen Wang, Hai-Shan Zhou, Guang-Nan Luo
Publikováno v:
Nuclear Materials and Energy, Vol 40, Iss , Pp 101694- (2024)
Copper-based brazing filler materials are commonly employed in vacuum brazing techniques to achieve joining of plasma-facing components for ITER. In this work, gas-driven permeation (GDP) and thermal desorption spectroscopy (TDS) experiments have bee
Externí odkaz:
https://doaj.org/article/ccb2603725af40c2b8e0b8a5b903c9fd
Publikováno v:
Nuclear Materials and Energy, Vol 23, Iss , Pp - (2020)
The energy characteristics of the main deuterium (D) traps in CuCrZr alloy samples, which were previously annealed at temperatures of 773, 873, 973 and 1073 K and then exposed to D2 gas at a pressure of 2.5 × 104 Pa and a temperature of 723 K for 10
Externí odkaz:
https://doaj.org/article/c61d26057f5647bcb3577ecf2363b2dd
Autor:
Ning Gao, Jin Jin, Chao Liu, Pengfei Tai, Tielong Shen, Yanbin Sheng, Hongpeng Zhang, Wen-Hao He, Kongfang Wei, Hailong Chang, Xing Gao, Minghuan Cui, Bingsheng Li, Yu-Xuan Huang, Yabin Zhu, Peng Luo, Jin-Xin Peng, Zhiguang Wang, Xuesong Fang, Cunfeng Yao, Dong Wang, Yi Han, Si-Xiang Zhao, Lilong Pang, Limin Zhang, Li Zhang, Jianrong Sun
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 406:543-547
The lattice disorders induced by He-ion implantation in GaN epitaxial films to fluences of 2 × 1016, 5 × 1016 and 1 × 1017 cm−2 at room temperature (RT) have been investigated by a combination of Raman spectroscopy, high-resolution X-ray diffrac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1757cb6743dfef98b6020f4aed7a4108
https://doi.org/10.1016/j.nimb.2016.12.039
https://doi.org/10.1016/j.nimb.2016.12.039
Publikováno v:
Proceedings of the 3rd Annual International Conference on Advanced Material Engineering (AME 2017).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ef3259367365ef67217d44278f30a0f
https://doi.org/10.2991/ame-17.2017.3
https://doi.org/10.2991/ame-17.2017.3
Publikováno v:
Materials Science Forum. 686:641-645
The yttria-erbia multilayered coatings were prepared on 316L stainless steel substrates by bipolar pulse magnetron sputtering. Structures of these coatings were examined by X-ray diffraction and scanning electron microscopy. Bonding strength of these
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::baffe8a019f8c4655567c0cf68ba0351
https://doi.org/10.4028/www.scientific.net/msf.686.641
https://doi.org/10.4028/www.scientific.net/msf.686.641
Autor:
Lilong Pang, Kongfang Wei, Yabin Zhu, Yanbin Sheng, Jin Jin, Jianrong Sun, Xuesong Fang, Peng Luo, Zhiguang Wang, Ning Gao, Si-Xiang Zhao, Zhiwei Ma, Pengfei Tai, Hailong Chang, Dong Wang, Hongpeng Zhang, Wen-Hao He, Tianyu Deng, Jin-Xin Peng, Yu-Xuan Huang, Minghuan Cui, Xing Gao, Tielong Shen, Cunfeng Yao, Bingsheng Li, Yi Han, Chao Liu
Publikováno v:
Chinese Physics Letters. 34:012801
Radiation-induced defect annealing in He+ ion-implanted 4H-SiC via H+ ion irradiation is investigated by Raman spectroscopy. There are 4H-SiC wafers irradiated with 230 keV He+ ions with fluences ranging from 5.0x10(15) cm(-2) to 2.0 x 10(16) cm(-2)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0370ee76672efc7f5b46868811091898
https://doi.org/10.1088/0256-307x/34/1/012801
https://doi.org/10.1088/0256-307x/34/1/012801
Autor:
Yi Han, Bing-Sheng Li, Zhi-Guang Wang, Jin-Xin Peng, Jian-Rong Sun, Kong-Fang Wei, Cun-Feng Yao, Ning Gao, Xing Gao, Li-Long Pang, Ya-Bin Zhu, Tie-Long Shen, Hai-Long Chang, Ming-Huan Cui, Peng Luo, Yan-Bin Sheng, Hong-Peng Zhang, Xue-Song Fang, Si-Xiang Zhao, Jin Jin
Publikováno v:
Chinese Physics Letters; Jan2017, Vol. 34 Issue 1, p1-1, 1p
In the 1980s there was a wave of introducing western thoughts in the academia of Mainland China. The significance of this movement is regarded by some Chinese scholars as another Enlightenment since the May 4th movement, 1919. In this movement there
