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3D Heterogenous Integrated Wideband Switchable Bandpass Filter Bank for Millimeter Wave Applications

Autor: Zhiyu Wang, Yujian Shu, Siyuan Ma, Xi Guo, Wei Yang, Xu Ding, Xiaofeng Lyu, Faxin Yu

Publikováno v: Electronics; Volume 12; Issue 1; Pages: 194

This article proposes a three-dimensional heterogenous-integrated (3DHI) switchable bandpass filter bank with two independent wideband filter channels that cover 26–40 GHz and 32.5–40 GHz, respectively. An accurate wafer-level process with a high

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e6105b53bbe83c24d569c7bde6f8307f
https://doi.org/10.3390/electronics12010194

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Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating

Autor: W.H.A. Wien, Fred Roozeboom, Harm C. M. Knoops, H.W. van Zeijl, Wilhelmus M. M. Kessels, M. Saadaoui, R. M. C. M. van de Sanden, C. Kwakernaak, F.C. Voogt, H. T. M. Pham, Pasqualina M. Sarro

Publikováno v: Ieee Transactions on Components Packaging and Manufacturing Technology, 1, 1728-1738
IEEE Transactions on Components, Packaging and Manufacturing Technology, 11, 1, 1728-1738
IEEE Transactions on Components and Packaging Technologies, 1(11), 1728-1738. Institute of Electrical and Electronics Engineers

One of the critical steps toward producing void-free and uniform bottom-up copper electroplating in high aspect-ratio (AR) through-silicon vias (TSVs) is the ability of the copper electrolyte to spontaneously flow through the entire depth of the via.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::390c5cdce6c7fc5aec9e7e434140c66a
https://doi.org/10.1109/tcpmt.2011.2167969