Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Si Ping Zhao"'
Publikováno v:
2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
A surface layer formation by Cs+ bombardment was observed during ultra-thin oxynitride gate dielectrics depth profiling. A significant thickness change relative to ultra-thin layer of oxynitride was noticed when testing a bombarded sample after a per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f81be73c77c459632d8431bf0ce31e9b
https://doi.org/10.1109/ipfa.2017.8060216
https://doi.org/10.1109/ipfa.2017.8060216
Publikováno v:
2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
A previous study on long term reproducibility [1] demonstrated that CAMECA Wf can delivered the relative standard deviation (RSD) of the relative sensitivity factors (RSF) of boron (B) are typically 3.7%. Above results show that deviation can be esti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1dd5c144ef09559c0db51621ae13e1a
https://doi.org/10.1109/ipfa.2017.8060158
https://doi.org/10.1109/ipfa.2017.8060158
Publikováno v:
2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Thin film deposition process invariably introduces compressive or tensile stress in the films. The stress in a film causes the wafer to warp whose curvature is estimated in a wafer fab using optical reflectance technique. Alternatively, the wafer cur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d35019767904f1c390ab44fac59fbe77
https://doi.org/10.1109/ipfa.2017.8060139
https://doi.org/10.1109/ipfa.2017.8060139
Autor:
Si Ping Zhao, Xiaoxuan Li, Jun Xie, Jae Soo Park, Ramesh Rao Nistala, Myat Thi Myo, Xintong Zhu
Publikováno v:
2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
In this study, a comparison of the interfacial adhesion strength of Plasma Enhanced Chemical Vapor Deposition (PECVD) silicon nitride (SiN)/Cu and High-Density Plasma Chemical Vapor Deposition (HDP CVD) SiN/Cu was performed using the 4-Point-Bending
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61e15eaa4a39bea63b1005a129019170
https://doi.org/10.1109/ipfa.2017.8060190
https://doi.org/10.1109/ipfa.2017.8060190
Publikováno v:
2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
In this paper, we present three cases studies with dedicated FIB-TEM technique that developed to characterize each of them. The first case describes a FIB sample preparation method that can include two columns of the structure of interest into one sa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::367592401960f2b173784573d59291fd
https://doi.org/10.1109/ipfa.2017.8060140
https://doi.org/10.1109/ipfa.2017.8060140
Publikováno v:
2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
In this paper, we present a study on protective coating techniques for thin film X-TEM sample preparation. The study shows that proper choice of the protective layer before FIB cross section is a crucial step to maintain the film profile and make sur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f412acbbc7275d0f15c28746de29f1a
https://doi.org/10.1109/ipfa.2017.8060138
https://doi.org/10.1109/ipfa.2017.8060138
Autor:
Koesun Pak, Suhas Vasant Shaha, Ramesh Rao Nistala, Yanjing Yang, Si Ping Zhao, Santosh Kumar Pani, Xintong Zhu, Pandurangan Madhavan, Jinsong Xu, Vincent Chai
Publikováno v:
2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Bond pad sidewall polymer removal in a thick passivation device was attempted using different approaches, longer NE111 clean, 250°C bake and high temperature (HT) NE111 clean. SLAT methodology was adopted to evaluate the Al bond pad quality due to F
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cb5e4abd14cc0e89a2abc12c82cdba5
https://doi.org/10.1109/ipfa.2016.7564311
https://doi.org/10.1109/ipfa.2016.7564311
Publikováno v:
2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Phosphorus is typically a common dopant used in wafer manufacturing. Measuring of phosphorous in Si-wafer is always demanding and matrix interferences is always a problem in VPD ICPMS. It is reported here the measuring of phosphorus in VPD matrix usi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::888e3a2174ffcd845b2a36a04b954010
https://doi.org/10.1109/ipfa.2016.7564275
https://doi.org/10.1109/ipfa.2016.7564275
Publikováno v:
2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
In this paper, we discussed the challenges of chemical analysis using TEM energy-dispersive X-ray spectroscopy (EDS) and electron-energy loss spectroscopy (EELS) for semiconductor devices. In the first case study, we showed that EDS peak overlapping
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cf8063bbcaeac91d17a1bae8d907619
https://doi.org/10.1109/ipfa.2016.7564254
https://doi.org/10.1109/ipfa.2016.7564254
Publikováno v:
2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
This paper showed that 75As was a better analyte species than 28Si75As in silicon dioxide for accurate quantitative profiling by Time-Of-Flight Secondary Ion Mass Spectrometry. Contrary to silicon matrix, the ion yield of 75As showed 1 order higher t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb49e3d0f91543869632fd3608a85af5
https://doi.org/10.1109/ipfa.2016.7564258
https://doi.org/10.1109/ipfa.2016.7564258