Zobrazeno 1 - 10
of 309
pro vyhledávání: '"Si, Mengwei"'
Autor:
Hu, Tao, Sun, Xiaoqing, Bai, Mingkai, Jia, Xinpei, Dai, Saifei, Li, Tingting, Han, Runhao, Ding, Yajing, Fan, Hongyang, Zhao, Yuanyuan, Chai, Junshuai, Xu, Hao, Si, Mengwei, Wang, Xiaolei, Wang, Wenwu
In this work, we demonstrate the enlargement of the memory window of Si channel FeFET with ferroelectric Hf0.5Zr0.5O2 by gate-side dielectric interlayer engineering. By inserting an Al2O3 dielectric interlayer between TiN gate metal and ferroelectric
Externí odkaz:
http://arxiv.org/abs/2312.16829
Autor:
Lin, Zehao, Si, Mengwei, Askarpour, Vahid, Niu, Chang, Charnas, Adam, Shang, Zhongxia, Zhang, Yizhi, Hu, Yaoqiao, Zhang, Zhuocheng, Liao, Pai-Ying, Cho, Kyeongjae, Wang, Haiyan, Lundstrom, Mark, Maassen, Jesse, Ye, Peide D.
High drive current is a critical performance parameter in semiconductor devices for high-speed, low-power logic applications or high-efficiency, high-power, high-speed radio frequency (RF) analog applications. In this work, we demonstrate an In2O3 tr
Externí odkaz:
http://arxiv.org/abs/2205.00357
Autor:
Zhang, Zhuocheng, Lin, Zehao, Liao, Pai-Ying, Askarpour, Vahid, Dou, Hongyi, Shang, Zhongxia, Charnas, Adam, Si, Mengwei, Alajlouni, Sami, Noh, Jinhyun, Shakouri, Ali, Wang, Haiyan, Lundstrom, Mark, Maassen, Jesse, Ye, Peide D.
In this work, we demonstrate atomic-layer-deposited (ALD) single-channel indium oxide (In2O3) gate-all-around (GAA) nanoribbon FETs in a back-end-of-line (BEOL) compatible process. A maximum on-state current (ION) of 19.3 mA/{\mu}m (near 20 mA/{\mu}m
Externí odkaz:
http://arxiv.org/abs/2205.00360
In order to continue to improve integrated circuit performance and functionality, scaled transistors with short channel lengths and low thickness are needed. But the further scaling of silicon-based devices and the development of alternative semicond
Externí odkaz:
http://arxiv.org/abs/2203.02869
Publikováno v:
In Sensors and Actuators: B. Chemical 15 August 2024 413
Autor:
Neumayer, Sabine M., Si, Mengwei, Li, Junkang, Liao, Pai-Ying, Tao, Lei, O'Hara, Andrew, Pantelides, Sokrates T., Ye, Peide D., Maksymovych, Petro, Balke, Nina
Publikováno v:
ACS Appl. Mater. Interfaces 2022, 14, 2, 3018-3026
The van der Waals layered material CuInP2S6 features interesting functional behavior, including the existence of four uniaxial polarization states, polarization reversal against the electric field through Cu ion migration, a negative-capacitance regi
Externí odkaz:
http://arxiv.org/abs/2109.13331
Tellurium (Te) is a narrow bandgap semiconductor with a unique chiral crystal structure. The topological nature of electrons in the Te conduction band can be studied by realizing n-type doping using atomic layer deposition (ALD) technique on two-dime
Externí odkaz:
http://arxiv.org/abs/2107.08365
Autor:
Si, Mengwei, Ye, Peide D.
Ferroelectric field-effect transistors (Fe-FETs) with ferroelectric hafnium oxide (FE HfO2) as gate insulator are being extensively explored as a promising device candidate for three-dimensional (3D) NAND memory application. FE HfO2 exhibits long ret
Externí odkaz:
http://arxiv.org/abs/2105.12892
We investigate the polarization switching mechanism in ferroelectric-dielectric (FE-DE) stacks and its dependence on the dielectric thickness (TDE). We fabricate HZO-Al2O3 (FE-DE) stack and experimentally demonstrate a decrease in remnant polarizatio
Externí odkaz:
http://arxiv.org/abs/2105.04647
Autor:
Bae, Hagyoul, Park, Tae Joon, Noh, Jinhyun, Chung, Wonil, Si, Mengwei, Ramanathan, Shriram, Ye, Peide D.
Nano-membrane tri-gate beta-gallium oxide (\b{eta}-Ga2O3) field-effect transistors (FETs) on SiO2/Si substrate fabricated via exfoliation have been demonstrated for the first time. By employing electron beam lithography, the minimum-sized features ca
Externí odkaz:
http://arxiv.org/abs/2105.01721