Zobrazeno 1 - 10
of 164
pro vyhledávání: '"Shyue-Kung Lu"'
Autor:
Masao Ohmatsu, Fumiya Sako, Yuki Ikiri, Hiroyuku Yotsuyanagi, Shyue-Kung Lu, Masaki Hashizume
Publikováno v:
2022 IEEE CPMT Symposium Japan (ICSJ).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f45e7bede1f1ca74733458636b935f84
https://doi.org/10.1109/icsj55786.2022.10034736
https://doi.org/10.1109/icsj55786.2022.10034736
Publikováno v:
2022 IEEE 31st Asian Test Symposium (ATS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7558c245df5cc6dd84fc3e351375745c
https://doi.org/10.1109/ats56056.2022.00015
https://doi.org/10.1109/ats56056.2022.00015
Autor:
Masao Ohmatsu, Yuto Ohtera, Yuki Ikiri, Hiroyuki Yotsuyanagi, Shyue-Kung Lu, Masaki Hashizume
Publikováno v:
2022 IEEE 31st Asian Test Symposium (ATS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cedec9f3c4ca3312fa9c02ff3ec6b988
https://doi.org/10.1109/ats56056.2022.00021
https://doi.org/10.1109/ats56056.2022.00021
Publikováno v:
2022 IEEE International Test Conference (ITC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88ffe93471147e207e897a5c3a60f2c3
https://doi.org/10.1109/itc50671.2022.00047
https://doi.org/10.1109/itc50671.2022.00047
Publikováno v:
Journal of Electronic Testing. 37:503-513
A variety of resistive memories have been proposed in recent years. Among these emerging technologies, phase change memory (PCM) has received the most research attentions since it has the advantages of high scalability, non-volatility, fast access, s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87a5ca6e9ed9d744d29227def6fe4df8
https://doi.org/10.1007/s10836-021-05961-1
https://doi.org/10.1007/s10836-021-05961-1
Autor:
Hiroyuki Yotsuyanagi, Yutaka Uematsu, Fumiya Sako, Yasuhiro Ikeda, Masaki Hashizume, Yuki Ikiri, Toru Yazaki, Shyue-Kung Lu
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 11:931-943
In this article, we propose two kinds of electrical interconnect test methods for production tests and field ones of assembled circuit boards, which are performed prior to and after shipping to market, respectively. For these tests, we also propose a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4290041f8eec81e9cda8f0f6c20d3358
https://doi.org/10.1109/tcpmt.2021.3079159
https://doi.org/10.1109/tcpmt.2021.3079159
Publikováno v:
2022 IEEE International Test Conference in Asia (ITC-Asia).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2100724ed887cea77aac85d208899a75
https://doi.org/10.1109/itcasia55616.2022.00011
https://doi.org/10.1109/itcasia55616.2022.00011
Publikováno v:
2022 IEEE International Test Conference in Asia (ITC-Asia).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a86150189895fb808cd5bf3dff20dc01
https://doi.org/10.1109/itcasia55616.2022.00018
https://doi.org/10.1109/itcasia55616.2022.00018
Autor:
Chi-Tien Sun, Chun-Lung Hsu, Hiroyuki Yotsuyanagi, Masaki Hashizume, Shu-Chi Yu, Shyue-Kung Lu
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 28:634-645
By analyzing the fault behaviors of conventional flash memory fault models, two new concise fault types are proposed: the 1-safe fault and the 0-safe fault. For a 1(0)-safe fault, if logic 1(0) is programmed into the faulty cell, the effect of the fa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7525568d33189a53d128e491943d75b
https://doi.org/10.1109/tvlsi.2019.2957830
https://doi.org/10.1109/tvlsi.2019.2957830
Publikováno v:
Journal of Electronic Testing. 35:485-495
Due the leakage mechanisms exist in DRAM cells, DRAM cells lose stored information over time. Periodic refresh operations are inevitable for retaining the stored information. However, refresh operations are very power hungry and impact the bandwidth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd40d4b2e2de9818a401e2e9d1536fb6
https://doi.org/10.1007/s10836-019-05817-9
https://doi.org/10.1007/s10836-019-05817-9