Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Shyng-Tsong Chen"'
Publikováno v:
Springer Handbook of Semiconductor Devices ISBN: 9783030798260
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32478d9fb5d00cd76635cee948ed0112
https://doi.org/10.1007/978-3-030-79827-7_5
https://doi.org/10.1007/978-3-030-79827-7_5
Publikováno v:
2017 IEEE International Interconnect Technology Conference (IITC).
While BEOL process/integration stride to explore new technologies to support scaling needs, BEOL design rules are hindering design scaling due to the increasing process complexity. A design rule calculation tool that can consider all relevant process
Autor:
Christopher J. Waskiewicz, Hideyuki Tomizawa, Muthumanickam Sankarapandian, Mignot Yann, Marcy Beard, Chiahsun Tseng, Yannick Loquet, Terry A. Spooner, Philip L. Flaitz, Eric G. Liniger, Shyng-Tsong Chen, James Hsueh-Chung Chen, Bryan Morris, Walter Kleemeier
Publikováno v:
Microelectronic Engineering. 107:138-144
In the attempts to push the resolution limits of 193nm immersion lithography, this work demonstrates the building of 3 metal level 56nm pitch copper dual-damascene interconnects, using Negative-Tone Development Lithography-Etch-Lithography-Etch (LELE
Autor:
Deepika Priyadarshini, Raghuveer R. Patlolla, Bassem Hamieh, O. van der Straten, Son Nguyen, Motoyama Koichi, B. Peethala, Nicole Saulnier, Vamsi Paruchuri, X. Zhang, Shariq Siddiqui, Frank W. Mont, Griselda Bonilla, Theodorus E. Standaert, Yongan Xu, Hao Tang, P. McLaughlin, J. McMahon, Donald F. Canaperi, Yann Mignot, Daniel C. Edelstein, John C. Arnold, Genevieve Beique, Terry A. Spooner, Michael Rizzolo, Hosadurga Shobha, Chen Hsueh-Chung, Matthew E. Colburn, Shyng-Tsong Chen, Jia Lee, Erik Verduijn
Publikováno v:
2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).
A 36 nm pitch BEOL has been evaluated for the 7 nm technology node. EUV lithography was employed as a single-exposure patterning solution. For the first time, it is shown that excellent reliability results can be obtained for Cu interconnects at thes
Autor:
Pak K. Leung, James Hsueh-Chung Chen, Muthumanickam Sankarapandian, Hosadurga Shobha, John C. Arnold, Satyavolu S. Papa Rao, Donald F. Canaperi, Stephen M. Gates, O. van der Straten, Atsunobu Isobayashi, Shyng-Tsong Chen, Terry A. Spooner
Publikováno v:
ECS Transactions. 25:279-289
In agreement with the ITRS roadmap, there have been several publications supporting the reduction in critical dimensions and the introduction of new materials to semiconductor processing (1,2,3). This paper highlights the observations and solutions t
Autor:
Sandra G. Malhotra, Sean P. E. Smith, Lynne Gignac, Shyng-Tsong Chen, Judith M. Rubino, Darryl D. Restaino, David L. Rath, Steffen K. Kaldor, Wei-Tsu Tseng, Mahadevaiyer Krishnan, Eric G. Liniger, Chao-Kun Hu, James R. Lloyd, Robert Rosenberg, Donald F. Canaperi, Soon-Cheon Seo, A. Simon
Publikováno v:
Thin Solid Films. 504:274-278
Electromigration mass flow in Cu damascene lines which were connected to W blocking barrier contacts and were capped with either a CoWP, Ta, Ta/TaN, Pd, SiN x , or SiC x N y H z layer was investigated. Cu lines, fabricated with body centered cubic α
Autor:
Shyng Tsong Chen, Anurag Jain, Eva E. Simonyi, Joel L. Plawsky, Svetlana Rogojevic, William N. Gill, Shom Ponoth, Paul S. Ho
Publikováno v:
Journal of Applied Physics. 91:3275-3281
Sintered xerogel films (porous SiO2) show a much higher thermal conductivity than other low dielectric constant (low-K) materials available for the same value of K. The thermal conductivity of xerogels which we have processed using different methods
Autor:
Neal Lafferty, Hosadurga Shobha, Wenhui Wang, Terry A. Spooner, Tae-Soo Kim, Matthew E. Colburn, Yann Mignot, Yongan Xu, Yunpeng Yin, Benjamin Duclaux, Shyng-Tsong Chen, Chiew-seng Koay, Marcy Beard, James J. Kelly, Oscar van der Straten, Seowoo Nam, Ming He, Nicole Saulnier
Publikováno v:
2013 IEEE International Interconnect Technology Conference - IITC.
For sub-64nm pitch interconnects build, it is beneficial to use Self Aligned Double Patterning (SADP) scheme for line level patterning. Usually a 2X pitch pattern was printed first, followed by a Sidewall Image Transfer (SIT) technique to create the
Autor:
Lynne Gignac, Judith M. Rubino, Donald F. Canaperi, Shyng-Tsong Chen, Chao-Kun Hu, Darryl D. Restaino, Sean P. E. Smith, Robert Rosenberg, B. Herbst, Soon-Cheon Seo
Publikováno v:
Applied Physics Letters. 84:4986-4988
Electromigration of Cu and diffusion of Co in Cu damascene bamboo-like grain structure lines capped with CoWP have been studied for sample temperatures between 350 and 425 °C. Void growth from the Cu line/W via interface was observed. Bulk-like acti
Autor:
David L. Rath, A. Simon, B. Herbst, Steffen K. Kaldor, Wei-Tsu Tseng, Chao-Kun Hu, Lynne Gignac, Eric G. Liniger, Shyng-Tsong Chen
Publikováno v:
Applied Physics Letters. 83:869-871
Electromigration in Cu Damascene lines with bamboo-like grain structures, either capped with Ta/TaN, SiNx, SiCxNyHz layers, or without any cap, was investigated. A thin Ta/TaN cap on top of the Cu line surface significantly improves electromigration