Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Shyh-Horng Yang"'
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 130:507-512
A fast ion microbeam has been used to study phenomena associated with soft errors in semiconductor memories. A spatially small beam with a fast blanking system is used to study both alpha particle and heavy ion strikes. The heavy ion strikes are typi
Autor:
J. Y. Yang, Greg C. Baldwin, S. Ghneim, T. Tran, Freidoon Mehrad, C. Machala, F. Chen, Shyh-Horng Yang, S. Liu, Frank S. Johnson, Byron Lovell Williams, Gordon P. Pollack, P.R. Chidambaram, Shashank S. Ekbote, J. Ai, Kamel Benaissa, D. Mosher
Publikováno v:
2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).
In this article, an industry leading 21 mask count 90nm CMOS SoC technology with integrated RF, analog, dense memory, low power or high-speed logic, and high-voltage DEMOS options is demonstrated. RF and analog characteristics with high on-chip volta
Autor:
B. Hornung, Al F. Tasch, Shayak Banerjee, A. Li-Fatou, Shyh-Horng Yang, Li Lin, C. Machala, Di Li
Publikováno v:
International Conferencre on Simulation of Semiconductor Processes and Devices.
The low energy as-implanted profile is very sensitive to the cap oxide layer thickness and PAI conditions. In this work, theoretical and experimental studies have been carried out quantitatively to investigate these dependencies. Using ZBL pair-speci
Publikováno v:
2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).
The gate oxide breakdown voltages of stresses applied to the gates of transistors are compared to the gate oxide breakdown voltages of stresses applied to the drains of transistors. The breakdown voltages for the drain-side stress are shown to be hig
Autor:
Shyh-Horng Yang, Chang-Hoon Choi, S. Johnson, P.R. Chidambaram, S. Ekbote, Robert W. Dutton, C. F. Machala, G. Pollack
Publikováno v:
International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003..
Degraded junction leakage current in scaled MOSFETs due to enhanced band-to-band tunneling (i.e. local Zener effect) is characterized based on a modified band-to-band tunneling model. To suppress the severe drain leakage current in the presence of hi
Publikováno v:
1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216).
We have investigated the impact on soft error rate (SER) of introducing platinum (Pt) as the capacitor electrodes in 1 Gb DRAM technology. For 0.16 /spl mu/m feature size, we find that direct a particle strikes only cause errors for a critical charge
Autor:
Chang-Hoon Choi, Shyh-Horng Yang, Pollack, G., Ekbote, S., Chidambaram, P.R., Johnson, S., Machala, C., Dutton, R.W.
Publikováno v:
International Conference on Simulation of Semiconductor Processes & Devices, 2003. SISPAD 2003; 2003, p133-136, 4p
Publikováno v:
2002 IEEE International Reliability Physics Symposium. Proceedings 40th Annual (Cat. No.02CH37320); 2002, p73-78, 6p
Autor:
Di Li, Shyh-Horng Yang, Machala, C., Li Lin, Tasch, Al.F., Hornung, B., Li-Fatou, A., Banerjee, S.K.
Publikováno v:
International Conference on Simulation of Semiconductor Processes & Devices; 2002, p217-220, 4p
Autor:
Song Zhao, Shaoping Tang, Nandakumar, M., Scott, D.B., Sridhar, S., Chatterjee, A., Youngmin Kim, Shyh-Horng Yang, Shi-Charng Ai, Ashburn, S.P.
Publikováno v:
International Conference on Simulation of Semiconductor Processes & Devices; 2002, p43-46, 4p