Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Shyh-Fann Ting"'
Autor:
Shyh-Fann Ting, 丁世汎
91
In this dissertation, we report the investigation of two light-elements covalently bonded materials i.e. nitrided SiC (SiCN) and nitrided SiO2 (SiON) in the applications of electronic devices and deep submicron CMOS devices, respectively. Fir
In this dissertation, we report the investigation of two light-elements covalently bonded materials i.e. nitrided SiC (SiCN) and nitrided SiO2 (SiON) in the applications of electronic devices and deep submicron CMOS devices, respectively. Fir
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/95002252947752634488
Autor:
P. L. Cheng, Li-Shian Jeng, C. I. Liao, C. C. Chien, C. L. Yang, S. F. Tzou, Osbert Cheng, Cheng Tung Huang, Wensyang Hsu, Shyh-Fann Ting
Publikováno v:
Materials Chemistry and Physics. 107:471-475
Locally strained Si technology using embedded SiGe has been used to improve pMOSFET device performance through hole mobility enhancement. Embedded SiGe is achieved by selectively growing epitaxial SiGe film in recessed Si pMOSFET source and drain are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3965ee33a905ec766939def8560d07d0
https://doi.org/10.1016/j.matchemphys.2007.08.020
https://doi.org/10.1016/j.matchemphys.2007.08.020
Autor:
Mei-Lun Tseng, Kun-Hsien Lee, Li-Shian Jeng, Cheng Tung Huang, Osbert Cheng, Wen-Han Hung, Chia-Wen Liang, Shyh-Fann Ting, Meng-Yi Wu
Publikováno v:
Japanese Journal of Applied Physics. 46:2015-2018
A remarkable 50% drive current enhancement for p-type metal–oxide–semiconductor field-effect-transistors (pMOSFETs) using a highly compressive SiN contact etch stop layer (CESL) has been successfully demonstrated. In this study, we also first pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7a88b4495b5043673dc4d0db10c5ef3
https://doi.org/10.1143/jjap.46.2015
https://doi.org/10.1143/jjap.46.2015
Publikováno v:
Sensors and Actuators A: Physical. 133:9-12
This paper reports a front-illuminated planar InGaAs PIN photodiode with very low dark current, very low capacitance and very high responsivity on S-doped InP substrate. The presented device which has a thick absorption layer of 2.92 μm and a photos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::598a56125f8d001f8ea5eeeaa90b3a20
https://doi.org/10.1016/j.sna.2006.04.023
https://doi.org/10.1016/j.sna.2006.04.023
Autor:
Hon Kuan, Shih-Fang Chen, Shyh-Fann Ting, Yean-Kuen Fang, Chin-Yung Liang, C.Y. Lin, S. J. Chang
Publikováno v:
Journal of Electronic Materials. 35:1837-1841
This paper reports the growth of polycrystalline GaN on Si(100) and single-crystalline h-GaN on Si(111) substrates with a single-crystalline SiCN burffer layer by metalorganic chemical vapor deposition (MOCVD). From high-resolution x-ray diffraction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cf3b82b9000ba8973e9f86d617e0244
https://doi.org/10.1007/s11664-006-0165-2
https://doi.org/10.1007/s11664-006-0165-2
Autor:
Wen-Rong Chang, Shih-Fang Chen, Yean-Kuen Fang, Chun-Yu Lin, Sheng-Beng Hwang, Cheng-Nan Chang, Shyh-Fann Ting
Publikováno v:
Journal of Electronic Materials. 33:181-184
This paper reports the study of ohmic and Schottky contacts to rapid-thermal chemical vapor deposition (RTCVD) deposited SiCN films in detail. Two prototypical blue-violet light-emitting devices with SiCN material based on the study have been develop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16aee1adec9c586b14a7db8b06dc4050
https://doi.org/10.1007/s11664-004-0177-8
https://doi.org/10.1007/s11664-004-0177-8
Autor:
Shyh-Fann Ting, T. Y. Lin, Hsin-Che Chiang, Jyh-Jier Ho, Shiue-Lung Chen, W.J. Lee, Wen-Rong Chang, C.Y. Lin, Y.K. Fang
Publikováno v:
Solid-State Electronics. 47:1127-1130
In this letter, output luminance, current efficiency and power efficiency of the organic light emitting diodes (OLEDs) with N 2 doped hole transport layer (HTL) have been studied in detail. Experimental results show that the current efficiency and th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d265b8a9a94c522251121eda5c7f4602
https://doi.org/10.1016/s0038-1101(02)00497-5
https://doi.org/10.1016/s0038-1101(02)00497-5
Autor:
T. Y. Lin, Ming-Fang Wang, Shyh-Fann Ting, C.H. Yu, Yean-Kuen Fang, Mong-Song Liang, W. D. Wang, Liang-Gi Yao, Mo-Chiun Yu, S. C. Chen, Chia-Lin Chen, C. H. Chen, Chih-Wei Yang
Publikováno v:
Solid-State Electronics. 47:751-754
The origins of different gate leakage behaviors for both PMOS and NMOS with ultra-thin nitrided gate oxide have been studied and modeled. Both equivalent oxide thickness (EOT) and barrier lowering are affected the gate leakage. In NMOS with nitrided
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d937b09116ef10318eca8fdc0f5c826
https://doi.org/10.1016/s0038-1101(02)00357-x
https://doi.org/10.1016/s0038-1101(02)00357-x
Autor:
Yong-Shiuan Tsair, Yean-Kuen Fang, Jyh-Jier Ho, Hsin-Che Chiang, Cheng-Nan Chang, Shyh-Fann Ting, Ming-Chun Hsieh, Wen-Tse Hsieh, Chun-Sheng Lin
Publikováno v:
Journal of Electronic Materials. 31:1341-1346
Cubic crystalline silicon-carbon nitride (Si1−x−yCxNy) films have been grown successfully using various carbon sources by rapid-thermal chemical-vapor deposition (RTCVD). The characteristics of the Si1−x−yCxNy films grown with SiH3CH3, C2H4,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6726d817ef3778631cc949647ac8aec0
https://doi.org/10.1007/s11664-002-0119-2
https://doi.org/10.1007/s11664-002-0119-2
Publikováno v:
Solid-State Electronics. 46:1949-1952
The thermal effects on the I/V characteristics of p-SiGeC/n-Si heterojunction diode with C3H8 as carbon source has been studied. Higher breakdown voltage under higher temperature is found. More Si atoms contained and less lattice misfit in SiGeC/Si i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15c97d8951bf97b992f886fbe5b6a15f
https://doi.org/10.1016/s0038-1101(02)00125-9
https://doi.org/10.1016/s0038-1101(02)00125-9