Zobrazeno 1 - 10
of 150
pro vyhledávání: '"Shyh-Chiang Shen"'
Autor:
Yi-Lin Tsai, Sheng-Kai Huang, Huang-Hsiung Huang, Shu-Mei Yang, Kai-Ling Liang, Wei-Hung Kuo, Yen-Hsiang Fang, Chih-I Wu, Shou-Wei Wang, Hsiang-Yun Shih, Zhiyu Xu, Minkyu Cho, Shyh-Chiang Shen, Chien-Chung Lin
Publikováno v:
IEEE Photonics Journal, Vol 12, Iss 6, Pp 1-9 (2020)
We determined the optical and electrical characteristics of GaN-based, ultraviolet micro light emitting diodes (microLEDs). Such microLEDs are essential to next-generation high-resolution micro-displays. Square-shaped microLEDs of different sizes (si
Externí odkaz:
https://doaj.org/article/bfe0c5b6110a40bbabc727e4414d710a
Autor:
Daryl Key, Edward Letts, Chuan-Wei Tsou, Mi-Hee Ji, Marzieh Bakhtiary-Noodeh, Theeradetch Detchprohm, Shyh-Chiang Shen, Russell Dupuis, Tadao Hashimoto
Publikováno v:
Materials, Vol 12, Iss 12, p 1925 (2019)
Free-standing gallium nitride (GaN) substrates are in high demand for power devices, laser diodes, and high-power light emitting diodes (LEDs). SixPoint Materials Inc. has begun producing 2” GaN substrates through our proprietary Near Equilibrium A
Externí odkaz:
https://doaj.org/article/1576668a9ca04c5d8082f83c74188a0c
Autor:
Hoon Jeong, E. A. Garzda, Mi-Hee Ji, Minkyu Cho, Theeradetch Detchprohm, Shyh-Chiang Shen, A. N. Otte, Russell D. Dupuis
Publikováno v:
IEEE Journal of Quantum Electronics. 59:1-8
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e31ae02fcc6c3448180fd50642cfe903
https://doi.org/10.1109/jqe.2023.3266759
https://doi.org/10.1109/jqe.2023.3266759
Autor:
Chuan-Wei Tsou, Russell D. Dupuis, Zhiyu Xu, Marzieh Bakhtiary-Noodeh, Theeradetch Detchprohm, Minkyu Cho, Hoon Jeong, Shyh-Chiang Shen
Publikováno v:
IEEE Transactions on Electron Devices. 68:2759-2763
We report high-performance homojunction GaN avalanche photodiodes (APDs) grown on a low-defect GaN substrate and fabricated with an ion-implantation isolation method. High-quality p-i-n GaN layers were grown using metalorganic chemical vapor depositi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7cddaf09965101ffb480195027c5d2f
https://doi.org/10.1109/ted.2021.3069153
https://doi.org/10.1109/ted.2021.3069153
Autor:
Chuan-Wei Tsou, Minkyu Cho, Russell D. Dupuis, Can Cao, Shyh-Chiang Shen, Marzieh Bakhtiary-Noodeh, Theeradetch Detchprohm, Hoon Jeong, Zhiyu Xu
Publikováno v:
Journal of Electronic Materials. 50:4462-4468
Front-illuminated GaN-based p-i-n ultraviolet (UV) avalanche photodiodes (APDs) were grown by metalorganic chemical vapor deposition on a free-standing GaN substrate. X-ray diffraction measurements confirm the high crystal quality of the grown struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16e6b99de25304ee4e3e5fe0d9827a16
https://doi.org/10.1007/s11664-021-08981-x
https://doi.org/10.1007/s11664-021-08981-x
Autor:
Yuto Ando, Frank Mehnke, Henri Bouchard, Zhiyu Xu, Alec M. Fischer, Shyh-Chiang Shen, Fernando A. Ponce, Theeradetch Detchprohm, Russell D. Dupuis
Publikováno v:
Journal of Crystal Growth. 607:127100
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::124a43b9fad31f194661ad5cc68e9481
https://doi.org/10.1016/j.jcrysgro.2023.127100
https://doi.org/10.1016/j.jcrysgro.2023.127100
Autor:
Yen-Hsiang Fang, Chien-Chung Lin, Shyh-Chiang Shen, Hsiang-Yun Shih, Yi-Lin Tsai, Minkyu Cho, Sheng-Kai Huang, S.C. Wang, Huang-Hsiung Huang, Kai-Ling Liang, Zhiyu Xu, Chih-I Wu, Shu-Mei Yang, Wei-Hung Kuo
Publikováno v:
IEEE Photonics Journal, Vol 12, Iss 6, Pp 1-9 (2020)
We determined the optical and electrical characteristics of GaN-based, ultraviolet micro light emitting diodes (microLEDs). Such microLEDs are essential to next-generation high-resolution micro-displays. Square-shaped microLEDs of different sizes (si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::91cf77cf87421a9b78dfc99e9b0d5f49
https://doi.org/10.1109/jphot.2020.3037220
https://doi.org/10.1109/jphot.2020.3037220
Autor:
Russell D. Dupuis, Frank Mehnke, Alec M. Fischer, Zhiyu Xu, Henri K. Bouchard, Theeradetch Detchprohm, Shyh-Chiang Shen, Fernando A. Ponce
Publikováno v:
Gallium Nitride Materials and Devices XVII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d335ea7ae0ef41ec0a4b1130b530ee87
https://doi.org/10.1117/12.2607411
https://doi.org/10.1117/12.2607411
Autor:
Russell D. Dupuis, Hoon Jeong, Minkyu Cho, Zhiyu Xu, Shyh-Chiang Shen, Theeradetch Detchprohm, A. Nepomuk Otte
Publikováno v:
Gallium Nitride Materials and Devices XVII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2844e859a230267b731ea815b5b01750
https://doi.org/10.1117/12.2608330
https://doi.org/10.1117/12.2608330
Autor:
Marzieh Bakhtiary-Noodeh, Shyh-Chiang Shen, Russell D. Dupuis, Minkyu Cho, Zhiyu Xu, Theeradetch Detchphrom
Publikováno v:
ECS Transactions. 98:49-59
Gallium-nitride and related materials have become suitable semiconductor platforms for next-generation power electronic devices. This materials system leverages unique properties of wider energy bandgap, higher carrier mobility, and ultrashort carrie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f764b2b9848fbbd489e36c7bcded90a1
https://doi.org/10.1149/09806.0049ecst
https://doi.org/10.1149/09806.0049ecst