Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Shyam Pal"'
Publikováno v:
Chemical Society reviews. 46(16)
Continuous ongoing development of dense integrated circuits requires significant advancements in nanoscale patterning technology. As a key process in semiconductor high volume manufacturing (HVM), high resolution lithography is crucial in keeping wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f879c09e9310618aa8da4b78da25bc1a
https://pubmed.ncbi.nlm.nih.gov/28650497
https://pubmed.ncbi.nlm.nih.gov/28650497
Autor:
Hiroto Nozawa, Frank W. Mont, Yuji Asakawa, Jongwook Kye, Taher Kagalwala, Kuniaki Takeda, Francis Goodwin, Tsunehito Kohyama, Xintuo Dai, Wenhui Wang, Lei Sun, Granger Lobb, Shyam Pal
Publikováno v:
SPIE Proceedings.
Optical metrology tool, LX530, is designed for high throughput and dense sampling metrology in semiconductor manufacture. It can inspect the dose and focus variation in the process control based on the critical dimension (CD) and line edge roughness
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcd2bac60d0678bd4aca361b4413ab59
https://doi.org/10.1117/12.2258623
https://doi.org/10.1117/12.2258623
Publikováno v:
SPIE Proceedings.
Multiple patterning employing etch shrink extends the scaling of hardmask open CD (HCD) to sub-50nm regime. A plasma-assisted shrink technique is primarily used in the back-end-of-line (BEOL) however it faces major challenges such as the line end sho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35474b5b771a3d590c4e4f707beb1d77
https://doi.org/10.1117/12.2260450
https://doi.org/10.1117/12.2260450
Publikováno v:
2017 China Semiconductor Technology International Conference (CSTIC).
The rapid development in dense integrated circuits requires significant advancement in small scaling patterning technology. EUV technology is considered as a powerful solution for the sub-7 nm node pattering and beyond. The high performance resist de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea02d24745571de1f1a2af471d2c6496
https://doi.org/10.1109/cstic.2017.7919757
https://doi.org/10.1109/cstic.2017.7919757
Autor:
Aleksandra Clancy, Ayman Hamouda, Ashwini Chandrasekhar, Shyam Pal, Jeff Shu, Christopher Ordonio, Jason Eugene Stephens, Chun Hui Low, Ming He, Prakash Periasamy, Mary Claire Silvestre, Anbu Selvam Km Mahalingam, Peter Welti, Craig Child, Granger Lobb, Ketan Shah
Publikováno v:
2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).
10nm M1 local interconnect is using three-color litho-etch-litho-etch-litho-etch (LELELE) integration to enable technology scaling. This paper discusses the challenges to balance the three-color density in critical standard cell scaling, illustrates
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7a2ece826e66bfdf116c6484b2c2ed5
https://doi.org/10.1109/iitc-amc.2016.7507642
https://doi.org/10.1109/iitc-amc.2016.7507642
Autor:
Craig Child, Prakash Periasamy, Ashwini Chandrasekhar, Shyam Pal, Chun Hui Low, Anbu Selvam Km Mahalingam, Ketan Shah, Christopher Ordonio, Peter Welti
Publikováno v:
2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
In advanced technology nodes, the BEOL requires advanced patterning techniques such as triple patterning (LELELE) and side wall image transfer techniques to form metal and via structures with pitches below 50nm. In this paper, we demonstrate metal cr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2de681e559d4c68e72791f7ec32be1a
https://doi.org/10.1109/asmc.2016.7491157
https://doi.org/10.1109/asmc.2016.7491157
Autor:
Yayi Wei, Sheldon Meyers, Sam Lee, Bumhwan Jeon, Chen Li, Sohan Singh Mehta, Lokesh Subramany, Shyam Pal, David Cho
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXVIII.
The NTD (Negative Tone Developer) process has been embraced as a viable alternative to traditionally, more conventional, positive tone develop processes. Advanced technology nodes have necessitated the adopting of NTD processes to achieve such tight
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f56228637e4a5d8b246117f38e3b13c3
https://doi.org/10.1117/12.2034206
https://doi.org/10.1117/12.2034206
Autor:
Yun Tao Jiang, Mark Yelverton, Shyam Pal, Subramany Lokesh, Yayi Wei, Bumhwan Jeon, Sohan Singh Mehta, Chen Li
Publikováno v:
SPIE Proceedings.
Advanced thermal annealing processes used for transistor enhancing for the state of the art process nodes induce wafer grid deformations. RTA (Rapid Thermal Anneal) and LSA (Laser Scanning Anneal) processes are a few examples. High Order Wafer Alignm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d8b1f9edb76829fbf0c305183e5d4e6
https://doi.org/10.1117/12.2010709
https://doi.org/10.1117/12.2010709
Autor:
Jean Raymond Fakhoury, Salman Iqbal, Shyam Pal, Craig Higgins, Hui Peng Koh, Shaowen Gao, Chris Karanikas, Bumhwan Jeon, Vikrant Chauhan, Lokesh Subramany, Pedro Morrison, Sohan Singh Mehta, David Cho, Yayi Wei
Publikováno v:
SPIE Proceedings.
The objective of this work was to study the trench and contact hole shrink mechanism in negative tone develop resist processes and its manufacturability challenges associated for 20nm technology nodes and beyond. Process delay from post-exposure to d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87685a9d7533e36ea0508415a3b02d16
https://doi.org/10.1117/12.2012331
https://doi.org/10.1117/12.2012331
Autor:
Shyam Pal, Hui Husan Tsai, Michael D. Anderson, Wontae Hwang, Chien-Hsien S. Lee, Matthew Herrick, Xiang Hu, Yayi Wei, Bumhwan Jeon, Sohan Singh Mehta
Publikováno v:
SPIE Proceedings.
Higher density on 20nm logic chips require tighter pitches to be implemented not only at critical metal layers, but at BEOL critical VIA layers as well. Smaller pitches on critical via are no longer achievable through the conventional positive tone d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0527db671fc722af38fe6020954b41b5
https://doi.org/10.1117/12.2011843
https://doi.org/10.1117/12.2011843