Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Shy-Jay Lin"'
Autor:
Fen Xue, Shy-Jay Lin, Mingyuan Song, William Hwang, Christoph Klewe, Chien-Min Lee, Emrah Turgut, Padraic Shafer, Arturas Vailionis, Yen-Lin Huang, Wilman Tsai, Xinyu Bao, Shan X. Wang
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-9 (2023)
Abstract Electrical manipulation of magnetization without an external magnetic field is critical for the development of advanced non-volatile magnetic-memory technology that can achieve high memory density and low energy consumption. Several recent s
Externí odkaz:
https://doaj.org/article/48aff6bc59c3467985f35fc89665a5de
Autor:
Xiang Li, Shy-Jay Lin, Mahendra Dc, Yu-Ching Liao, Chengyang Yao, Azad Naeemi, Wilman Tsai, Shan X. Wang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 674-680 (2020)
As spin-orbit-torque magnetic random-access memory (SOT-MRAM) is gathering great interest as the next-generation low-power and high-speed on-chip cache memory applications, it is critical to analyze the magnetic tunnel junction (MTJ) properties neede
Externí odkaz:
https://doaj.org/article/b33005b56c8b478d842c17dbd013fc64
Publikováno v:
APL Materials, Vol 9, Iss 10, Pp 101106-101106-8 (2021)
Spin–orbit torque (SOT) magnetoresistive random-access memory (MRAM) devices have been proposed for energy efficient memory and computing applications. New classes of materials such as antiferromagnets, topological insulators, and semimetals can ge
Externí odkaz:
https://doaj.org/article/0480b08078054e2c934a84a7b27fc743
Autor:
Mahendra DC, Ding-Fu Shao, Vincent D.-H. Hou, Arturas Vailionis, P. Quarterman, Ali Habiboglu, M. B. Venuti, Fen Xue, Yen-Lin Huang, Chien-Min Lee, Masashi Miura, Brian Kirby, Chong Bi, Xiang Li, Yong Deng, Shy-Jay Lin, Wilman Tsai, Serena Eley, Wei-Gang Wang, Julie A. Borchers, Evgeny Y. Tsymbal, Shan X. Wang
Publikováno v:
Nature Materials. 22:591-598
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d38ddfaf114ccdc6afc4e1677c519953
https://doi.org/10.1038/s41563-023-01522-3
https://doi.org/10.1038/s41563-023-01522-3
Autor:
Chen-Yu Hu, Yu-Fang Chiu, Chia-Chin Tsai, Chao-Chun Huang, Kuan-Hao Chen, Cheng-Wei Peng, Chien-Min Lee, Ming-Yuan Song, Yen-Lin Huang, Shy-Jay Lin, Chi-Feng Pai
Publikováno v:
Spintronics XV.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc14a27d305388246922f36bb39f5d57
https://doi.org/10.1117/12.2634506
https://doi.org/10.1117/12.2634506
Autor:
Chen-Yu Hu, Yu-Fang Chiu, Chia-Chin Tsai, Chao-Chung Huang, Kuan-Hao Chen, Cheng-Wei Peng, Chien-Min Lee, Ming-Yuan Song, Yen-Lin Huang, Shy-Jay Lin, Chi-Feng Pai
5d transition metal Pt is the canonical spin Hall material for efficient generation of spin-orbit torques (SOTs) in Pt/ferromagnetic layer (FM) heterostructures. However, for a long while with tremendous engineering endeavors, the damping-like SOT ef
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b10305727eb4d4980e8be2bf77961163
http://arxiv.org/abs/2108.13857
http://arxiv.org/abs/2108.13857
Publikováno v:
2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
Current-induced spin-orbit torques (SOTs) in heavy metal/ferromagnet (HM/FM) systems have attracted considerable attention due to the efficient manipulation of the magnetization [1] , To accelerate the application of the SOT spintronic devices into t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66227e243b622f765c881201f972bb65
https://doi.org/10.1109/vlsi-tsa51926.2021.9440118
https://doi.org/10.1109/vlsi-tsa51926.2021.9440118
Autor:
Fen Xue, Shan-Yi Yang, Yi-Hui Su, Yu-Chen Hsin, I-Jung Wang, Shy-Jay Lin, Chi-Feng Pai, Jeng-Hua Wei, Yao-Jen Chang, MingYaun Song, Guan-Long Chen, Carlos H. Diaz, Yen Lin Huang, Chien-Ming Lee, Shan X. Wang
Publikováno v:
IRPS
Spin-orbit-torque magnetic random-access memory (SOT-MRAM) equipped with sub-I-V switching voltage [1, 2] is considered to be one of the promising candidates for next-generation low-power, high speed and non-volatile embedded cache memory application
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e537a83651102d833d9941a36b8764e
https://doi.org/10.1109/irps46558.2021.9405127
https://doi.org/10.1109/irps46558.2021.9405127
Autor:
Shy-Jay Lin, Chong Bi, Xiang Li, Masashi Miura, Vincent D.-H. Hou, Serena Eley, Ding-Fu Shao, Arturas Vailionis, Wilman Tsai, Julie A. Borchers, Yong Deng, Fen Xue, Mahendra Dc, Patrick Quarterman, Yen Lin Huang, Weigang Wang, Ali Habiboglu, Shan X. Wang, Evgeny Y. Tsymbal, Brian Kirby, Brooks Venuti
High spin-orbit torques (SOTs) generated by topological materials and heavy metals interfaced with a ferromagnetic layer show promise for next generation magnetic memory and logic devices. SOTs generated from the in-plane spin polarization along y-ax
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::529513f6031e760b0c53076dc9390020
http://arxiv.org/abs/2012.09315
http://arxiv.org/abs/2012.09315
Autor:
Xiang Li, Peng Li, Mahendra Dc, Yuri Suzuki, Vincent D.-H. Hou, Chong Bi, Shy-Jay Lin, Chien-Min Lee, Chih-Hung Nien, Shan X. Wang, Di Yi, Wilman Tsai, Fen Xue
Topological materials with large spin-orbit coupling and immunity to disorder-induced symmetry breaking show great promise for efficiently converting charge to spin. Here, we report that long-range disordered sputtered WTex thin films exhibit local c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::83e60d523109a56f9f148d1a6c23899c