Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Shwarts, Yu.M"'
Publikováno v:
In Cryogenics 2010 50(6):417-420
Publikováno v:
In Sensors & Actuators: A. Physical 2002 97:271-279
Publikováno v:
In Sensors & Actuators: A. Physical 2000 86(3):197-205
Publikováno v:
In Sensors & Actuators: A. Physical 1999 76(1):107-111
Autor:
Borblik, V.L., Korchevoi, A.A., Nikolenko, A.S., Strelchuk, V.V., Fonkich, A.M., Shwarts, Yu.M., Shwarts, M.M.
The technique of thermal vacuum deposition of Ge onto GaAs substrates has been used for obtaining nanocrystalline Ge films. Nanocrystalline character of the films is confirmed by atomic force microscopy of their surface and by the data of Raman light
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::c0f938131e15a68c1e2dbd89da3280d8
http://dspace.nbuv.gov.ua/handle/123456789/118485
http://dspace.nbuv.gov.ua/handle/123456789/118485
Shown in this paper is the efficiency of smoothing cubic spline approximation aimed at optimization of calibration of cryogenic silicon diode thermometers (SDTs). The proposed algorithm allows to significantly reduce time and material costs associate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::abbd90b3292c4f65ce50a6b1f5c7a9a4
http://dspace.nbuv.gov.ua/handle/123456789/117784
http://dspace.nbuv.gov.ua/handle/123456789/117784
Shown in this paper is the efficiency of a smoothing cubic spline approximation for temperature response curves (TRC) of wide range silicon diode thermometers (SDTs). The offered calculation algorithm allows to describe TRC with a high accuracy and r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::6b1c81b18df94157228cc8ee9fb4c286
http://dspace.nbuv.gov.ua/handle/123456789/118554
http://dspace.nbuv.gov.ua/handle/123456789/118554
A new analytical method of extraction of a diode series resistance from current-voltage characteristics is proposed which takes into account dependence of the series resistance on voltage (or current). The method supposes a presence of linear section
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::0e90463083182eaf8484e1afc7a2cbb9
http://dspace.nbuv.gov.ua/handle/123456789/118832
http://dspace.nbuv.gov.ua/handle/123456789/118832
Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region
Heavily doped silicon diodes of n⁺⁺-p⁺ type which exhibit the Mott temperature dependence of the forward current in a certain range of bias voltages and low temperatures have studied from the point of their use as temperature sensors. In the re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::d3267857241bd7141aac172ebf86d2a8
http://dspace.nbuv.gov.ua/handle/123456789/118120
http://dspace.nbuv.gov.ua/handle/123456789/118120
To explain the experimental behaviour of differential characteristics (ideality factor, differential resistance) before and after radiation influence, a theoretical model of injection current flow mechanisms for the silicon diode temperature sensors
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::450123126d0b21eb067b0694d3c02221
http://dspace.nbuv.gov.ua/handle/123456789/118002
http://dspace.nbuv.gov.ua/handle/123456789/118002