Výsledky vyhledávání - "Shuzo Takahashi"

Photoconductive properties of undoped and nitrogen‐doped ZnO single crystals in various ambiences

Autor: Shuzo Takahashi, Shuhei Kamada, Michiko Nakagawa, Tetsuya Chiba, Hiroshi Osada, Masahiro Daibo, Yasube Kashiwaba, Takami Abe, Akira Nakagawa, Shigeki Chiba, Ikuo Niikura, Y. Kashiwaba

Publikováno v: physica status solidi c. 13:581-584

The effects of ambiences on photoconductive properties of the Zn-face of undoped ZnO and nitrogen-doped ZnO (ZnO:N) single crystals are described. Oxygen (O2) gas affected the photocurrent spectra of the Zn-face of both single crystals. The photocurr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::359af6b0691ef0130da00cb3625578f3
https://doi.org/10.1002/pssc.201510260

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Optical characterization by variable angle spectroscopic ellipsometry of nitrogen-doped Mg Zn1−O thin films prepared by the plasma-assisted reactive evaporation method

Autor: Shigeki Chiba, Takami Abe, Kouichi Tsutsumi, K. Aota, Yasube Kashiwaba, Michiko Nakagawa, Y. Kashiwaba, Hiroshi Osada, T. Ojima, Masahiro Daibo, Tetsuya Chiba, Tamiya Fujiwara, Ikuo Niikura, Akira Nakagawa, Shuzo Takahashi, Michio Suzuki

Publikováno v: Thin Solid Films. 571:615-619

Non-doped Mg x Zn 1 − x O films (Mg x Zn 1 − x O films) and nitrogen-doped Mg x Zn 1 − x O films (Mg x Zn 1 − x O:N films) were grown epitaxially on Zn faces of ZnO single crystal substrates by the plasma-assisted reactive evaporation (PARE)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c379f3f37ef3a0bb9d53393e5817aa85
https://doi.org/10.1016/j.tsf.2014.02.091

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Applicability of nitrogen‐doped ZnO single crystals for photoconductive type UV sensors

Autor: Tetsuya Chiba, Masahiro Daibo, Kazuyuki Meguro, Akira Nakagawa, Haruyuki Endo, Y. Kashiwaba, Shuzo Takahashi, Yasube Kashiwaba, Takami Abe, Shuzo Oshima, Syuhei Kamata, Michiko Nakagawa, Hiroshi Osada, Shigeki Chiba, Ikuo Niikura

Publikováno v: physica status solidi c. 11:1304-1307

Nitrogen-doped (N-doped) ZnO single crystals were prepared by the hydrothermal method. Resistivity of the N-doped ZnO single crystal was 107–108 Ωcm, which was about 104-times higher than that of the non-doped ZnO single crystal. Photocurrent of t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::717b5f6a2746d66b612d21d13815ee89
https://doi.org/10.1002/pssc.201300625

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Estimation of band gap energy of Mg x Zn 1‐ x O films by photocurrent

Autor: K. Aota, Michiko Nakagawa, Hiroshi Osada, T. Ojima, Yasube Kashiwaba, Shigeki Chiba, Y. Kashiwaba, Masahiro Daibo, Tetsuya Chiba, Takami Abe, Akira Nakagawa, Ikuo Niikura, Shuzo Takahashi

Publikováno v: physica status solidi c. 11:1345-1348

The band gap energy (Eg) of high-quality Mgx Zn1-xO films grown on ZnO (0001) substrates by the plasma-assisted reactive evaporation method using a ZnMg alloy could be estimated by the photocurrent (Iph). Measurement of Iph was more useful than photo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::85417025301610f409c30fe11f6ebc6f
https://doi.org/10.1002/pssc.201300598

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Epitaxial growth of high‐quality Mg x Zn 1‐ x O films by a plasma‐assisted reactive evaporation method using ZnMg alloys as a source material

Autor: Shigeki Chiba, Takami Abe, Hiroshi Osada, T. Ojima, M. Nakagawa, Shuzo Takahashi, Masahiro Daibo, Tamiya Fujiwara, K. Yamaguchi, K. Aota, Ikuo Niikura, Akira Nakagawa, Haruyuki Endo, M. Tanaka, Y. Kashiwaba, Kazuyuki Meguro

Publikováno v: physica status solidi c. 9:1813-1816

Epitaxial growth of high-quality Mgx Zn1-xO films on Zn faces of single crystal ZnO substrates was achieved by a plasma-assisted reactive evaporation method using ZnMg alloys. The composition of Mg of Mgx Zn1-xO films grown by using this method stron

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e7ecfad44b42471c7acc888910f4f157
https://doi.org/10.1002/pssc.201100565

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Degrees of Parametrizations of Elliptic Curves by Shimura Curves

Autor: Shuzo Takahashi

Publikováno v: Journal of Number Theory. 90(1):74-88

In this paper, we study some properties of parametrizations of elliptic curves by Shimura curves. Fix a square-free positive integer N and an isogeny class E of elliptic curves of conductor N defined over Q. Consider a pair (D, M) such that N=DM and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc34cdaf716cf482184af3ce75cf7023

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Parametrizations of elliptic curves by Shimura curves and by classical modular curves

Autor: Kenneth A. Ribet, Shuzo Takahashi

Publikováno v: Proceedings of the National Academy of Sciences. 94:11110-11114

Fix an isogeny class 𝒜 of semistable elliptic curves over Q. The elements of 𝒜 have a common conductor N , which is a square-free positive integer. Let D be a divisor of N which is the product of an even number of primes—i.e., the discriminan

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::46e7017b065ed4396fd1e65744d8ba2d
https://doi.org/10.1073/pnas.94.21.11110

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