Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Shuxian Lv"'
Autor:
Meiwen Chen, Shuxian Lv, Boping Wang, Pengfei Jiang, Yuanxiang Chen, Yaxin Ding, Yuan Wang, Yuting Chen, Yan Wang
Publikováno v:
Nanomaterials, Vol 13, Iss 10, p 1608 (2023)
In this article, the endurance characteristic of the TiN/HZO/TiN capacitor was improved by the laminated structure of a ferroelectric Hf0.5Zr0.5O2 thin film. Altering the HZO deposition ratio, the laminated-structure interlayer was formed in the midd
Externí odkaz:
https://doaj.org/article/1cc8ce8acf0944b4b78bc5e73a47ad3a
Autor:
Yuan Wang, Yang Yang, Pengfei Jiang, Shuxian Lv, Boping Wang, Yuting Chen, Yaxin Ding, Tiancheng Gong, Bing Chen, Ran Cheng, Xiao Yu, Qing Luo
Publikováno v:
IEEE Electron Device Letters. 44:943-946
Autor:
Pengfei Jiang, Yang Yang, Wei Wei, Tiancheng Gong, Yuan Wang, Yuting Chen, Yaxin Ding, Shuxian Lv, Boping Wang, Meiwen Chen, Yan Wang, Qing Luo
Publikováno v:
IEEE Electron Device Letters. 44:602-605
Autor:
Yaxin Ding, Peng Yuan, Jie Yu, Yuting Chen, Pengfei Jiang, Yuan Wang, Yannan Xu, Shuxian Lv, Zhiwei Dang, Boping Wang, Xiaoxin Xu, Tiancheng Gong, Qing Luo
Publikováno v:
IEEE Transactions on Electron Devices. 69:5391-5394
Autor:
Peng Yuan, Boping Wang, Yang Yang, Shuxian Lv, Yuan Wang, Yannan Xu, Pengfei Jiang, Yuting Chen, Zhiwei Dang, Yaxin Ding, Tiancheng Gong, Qing Luo
Publikováno v:
IEEE Electron Device Letters. 43:1045-1048
Autor:
Yuting Chen, Yang Yang, Peng Yuan, Pengfei Jiang, Yannan Xu, Shuxian Lv, Yaxin Ding, Zhiwei Dang, Tiancheng Gong, Yan Wang, Qing Luo
Publikováno v:
IEEE Electron Device Letters. 43:930-933
Autor:
Zhiwei Dang, Shuxian Lv, Zhaomeng Gao, Meiwen Chen, Yannan Xu, Pengfei Jiang, Yaxin Ding, Peng Yuan, Yuan Wang, Yuting Chen, Qing Luo, Yan Wang
Publikováno v:
IEEE Electron Device Letters. 43:561-564
Autor:
Yannan Xu, Yang Yang, Shengjie Zhao, Tiancheng Gong, Pengfei Jiang, Yuan Wang, Peng Yuan, Zhiwei Dang, Yuting Chen, Shuxian Lv, Yaxin Ding, Yan Wang, Jinshun Bi, Qing Luo
Publikováno v:
IEEE Transactions on Electron Devices. 69:2145-2150
Autor:
Yaxin Ding, Yan Wang, Zhiwei Dang, Tiancheng Gong, Pengfei Jiang, Jinshun Bi, Yannan Xu, Haoran Yu, Yang Yang, Yuting Chen, Peng Yuan, Shuxian Lv, Shengjie Zhao, Yuan Wang, Qing Luo
Publikováno v:
IEEE Transactions on Electron Devices. 69:430-433
In this brief, we reported the improved break-down reliability and endurance in 10-nm Hf $_{0.5}$ Zr $_{0.5}$ O₂(HZO) using grain boundary interruption. By inserting an amorphous Al₂O₃ layer in the middle of polycrystalline HZO, grain boundarie
Autor:
Pengfei Jiang, Kunran Xu, Jie Yu, Yannan Xu, Peng Yuan, Yuan Wang, Yuting Chen, Yaxin Ding, Shuxian Lv, Zhiwei Dang, Tiancheng Gong, Yang Yang, Yan Wang, Qing Luo
Publikováno v:
Science China Information Sciences. 66