Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Shuvam Pawar"'
Publikováno v:
Journal of Nanoparticle Research. 25
Publikováno v:
IEEE Electron Device Letters. 43:446-449
Publikováno v:
Journal of Electronic Materials. 49:4653-4658
In this work, a lead-free magnetoelectric composite with a NiMnIn (180 nm)/AlN (180 nm)/NiMnIn (50 nm)/AlN (180 nm)/NiMnIn (180 nm) structure has been fabricated using magnetron sputtering. The AlN structure with an encapsulated NiMnIn layer exhibits
Publikováno v:
IEEE Electron Device Letters. 41:280-283
In this letter, we have performed a comprehensive analysis of the influence of the magnetic field on BAW resonator consisting of a highly magnetostrictive layer and AlN thin film. The fundamental resonant frequency of the fabricated BAW resonator is
Publikováno v:
Materials Chemistry and Physics. 219:74-81
The present study reports the effect of bottom electrodes (Al, Pt & Ti) on the texture, piezoelectric characteristics, dielectric properties and leakage current behavior of reactive DC magnetron sputtered AlN thin films. X-ray diffraction results rev
Publikováno v:
Advanced Materials Proceedings. 2:10-15
Publikováno v:
2019 IEEE 9th International Nanoelectronics Conferences (INEC).
In the reported work, the electrical measurements of DC sputtered Aluminum Nitrite (AlN) films with an insertion of a NiMnIn thin layer have been carried out. The fabricated AlN thin films exhibit highly (002) orientated wurtzite structure. Such high
Publikováno v:
Sensors and Actuators A: Physical. 242:67-72
For electrical characterization of bio-molecules and to make metallic contacts with the sensing element e.g. nano-wires, carbon nanotubes (CNTs), Graphene etc, the stability and minimization of contact resistance are always desirable, which is really
Publikováno v:
Journal of Physics D: Applied Physics. 53:395302
In this report, the ferromagnetic shape memory alloy (Ni50Mn35In15) and Pb0.96La0.04Zr0.52Ti0.48O3 based bilayer (Ni-Mn-In /PLZT (260 nm/300 nm)), trilayer (Ni-Mn-In/PLZT/Ni-Mn-In (130 nm/300 nm/130 nm)) and four-layer (Ni-Mn-In/PLZT/Ni-Mn-In/PLZT (1
Publikováno v:
AIP Conference Proceedings.