Zobrazeno 1 - 10
of 110
pro vyhledávání: '"Shutov S. V."'
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 4-6, Pp 39-45 (2022)
The cost of thermophotovoltaic converters can be reduced by making substrates of amorphous materials, which do not have an orienting effect, such as glass or fused quartz, for obtaining thin polycrystalline GaSb layers. The study establishes the cond
Externí odkaz:
https://doaj.org/article/106d233c428944e3b291f551301561dd
Autor:
Tsybulenko V. V., Shutov S. V.
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 5-6, Pp 33-39 (2020)
Heterostructures with lattice mismatched and compositionally different layers are widely used in modern electronic and optoelectronic device engineering. Generally such structures are manufactured by the methods of metal-organic vapor phase epitaxy,
Externí odkaz:
https://doaj.org/article/33cc439160b8474dafae850217f2cfbb
Autor:
Stepanchikov, D. M., Shutov, S. V.
The band structure of (ZnxCd1-x)3P2 alloy system is considered within the framework of Kildal's band model. Frequency dependencies of real and imaginary parts of dielectric function were received and analyzed in terms of direct band to band transitio
Externí odkaz:
http://arxiv.org/abs/1003.1887
Influence of Cd and Se atoms on the quantum efficiency of photon emission through EL2 defects in gallium arsenide single crystals has been investigated. A comparative technique of impurity diffusion in vacuum and arsenic atmospheres has been used. Th
Externí odkaz:
http://arxiv.org/abs/0911.2650
Near band-edge luminescence of semi-insulating undoped gallium arsenide at high levels of excitation
The dependences of the maximum and the half-width of near band-edge photoluminescence of semi-insulating undoped GaAs crystals at 77K on the concentration of background acceptor impurities and the level of excitation in the range from 3x1021 to 6x102
Externí odkaz:
http://arxiv.org/abs/0808.3070
The possibility of the composition control of the GaAs1-xPx solid solution on the GaAs substrate at liquid phase electroepitaxy from the Ga-As-P solution-melt is theoretically considered. By the simulation it was determined, that under steady-state c
Externí odkaz:
http://arxiv.org/abs/0808.1229
Autor:
Krasnov, V. A., Shwarts, Yu. M., Shwarts, M. M., Kopko, D. P., Fonkich, A. M., Yerochin, S. Yu., Shutov, S. V., Sypko, N. I
The technique of obtaining of p+-n-type gallium phosphide diode epitaxial structures from liquid phase was developed as well as pilot samples of diode temperature sensors were fabricated based on them. Thermometric and current-voltage characteristics
Externí odkaz:
http://arxiv.org/abs/0806.4138
Autor:
Vikulin I. M., Litvinenko V. N., Shutov S. V., Maronchuk A. I., Demenskiy A. N., Glukhova V. I.
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 2, Pp 29-32 (2018)
The authors investigate how and why defects influence the inverse characteristics of varactors. The paper presents experimental results on the effect laser gettering has on the electrical parameters of varactors. The mechanisms of the laser gettering
Externí odkaz:
https://doaj.org/article/3ab6ea7805df4e828c19e2d905e6045b
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2020, Vol. 23 Issue 3, p294-301. 8p.
Autor:
Sypko N. I., Shutov S. V., Fonkich A. М., Kopko D. P., Shwarts М. M., Shwarts Yu. M., Krasnov V. A., Erohin S. Yu.
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 6, Pp 38-40 (2008)
The method of reception of p+–n-diode epitaxial structures of GaP from liquid phase is developed. In the temperature range of 80—520 K thermometric and current-voltage characteristics of test models of diode temperature sensors are measured and t
Externí odkaz:
https://doaj.org/article/f7268e53545042aeadfc95d31b82ade9