Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Shurong Liang"'
Autor:
Pibo Su, Tingwei Li, Shurong Liang, Jinqiang Liang, Xiaoxue Wang, Xiaoming Wan, Feifei Wang, Fang Liu
Publikováno v:
Geofluids, Vol 2021 (2021)
As a new alternative energy source, gas hydrate has attracted wide attention all over the world. Since gas hydrate is always associated with free gas, the evaluation of the gas hydrate and free gas system is an important aspect of hydrate reservoir e
Externí odkaz:
https://doaj.org/article/02669ddb798e4e86b9f594de4aa90c7b
Publikováno v:
IEEE Internet of Things Journal. 9:20122-20135
Publikováno v:
Advanced Etch Technology and Process Integration for Nanopatterning XI.
Autor:
Wan Xiaoming, Su Pibo, Shurong Liang, Liang Jinqiang, Wang Xiaoxue, Fang Liu, Li Tingwei, Wang Feifei
Publikováno v:
Geofluids, Vol 2021 (2021)
As a new alternative energy source, gas hydrate has attracted wide attention all over the world. Since gas hydrate is always associated with free gas, the evaluation of the gas hydrate and free gas system is an important aspect of hydrate reservoir e
Publikováno v:
Proceedings of the 2020 3rd International Conference on E-Business, Information Management and Computer Science.
The construction of a smart city needs to be supported by good machine learning methods, random forest is a kind of technology which has been widely applied in dealing with regression or classification problems. The difficult points to be solved incl
Autor:
Yanru Wang, Guman Duan, Jiangfeng Lu, Weixia Bai, Yingzhen Niu, Fei Wang, Shurong Liang, Hongrui Ma
Publikováno v:
Annals of Joint. 2:80-80
Background: Patellar instability is a common problem. It is unclear that the medial and lateral patellar retinaculum respective effect on patella. The purpose of this study was to evaluate the synergistic effect of medial and lateral patellar retinac
Autor:
J.-Y. Jason Lin, Shurong Liang, Suyog Gupta, Arunanshu M. Roy, W. P. Maszara, Yoshio Nishi, Krishna C. Saraswat, Bin Yang
Publikováno v:
2012 International Silicon-Germanium Technology and Device Meeting (ISTDM).
We report a low specific contact resistivity of 5.5 x 10-7 Ωcm2 in nickel germanide (NiGe) contacts on n+ Ge. Data fitting with the contact resistivity model by A.M. Roy et al. (2010) suggests SBH of ~0.44eV for NiGe and ~0.55eV for Al/Ti contacts.
Autor:
Victor W. Day, Todd A. Eberspacher, Matthew H. Frey, W. G. Klemperer, Shurong Liang, David A. Payne
Publikováno v:
Chemistry of Materials. 8:330-332
The solvated barium titanium glycolate BaTi(C2H4O)3·4C2H6O·H2O forms a preceramic powder upon calcination in air at 900 °C that sinters to polycrystalline BaTiO3 at 1300 °C (see inset). The precursor is easily prepared using benchtop procedures f
Integrated thin film capacitors: interfacial control and implications on fabrication and performance
Publikováno v:
1999 Proceedings. 49th Electronic Components and Technology Conference (Cat. No.99CH36299).
Despite the huge potential, integral passives form less than 3% of the replaceable discrete components. A major obstacle in bridging this gap has been the absence of a wider choice of materials that would conform to stringent performance requirements
Publikováno v:
MRS Proceedings. 351
Several new crystalline bimetallic alkoxide precursors for barium titanates processing have been prepared: {[Ba(Solv)2]2[Ti(OAr)6]2} (1) (Solv = coordinated solvent molecule, Ar = aryl group), [Ba(CH2OHCH2OH)4(H20)][Ti(OCH2CH2O)3] (2), Ba[Ti2(OR)9]2